Alloy-compositional-fluctuation effects on optical gain characteristics in AlGaN and InGaN quantum-well laser diodes

Atsushi A. Yamaguchi, Takuto Minami, Shigeta Sakai, Kazunobu Kojima, Shigefusa F. Chichibu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Optical gain characteristics have been theoretically calculated in AlGaN and InGaN quantum-well structures considering the effects of alloy compositional fluctuation in the active layers. It is found that the difference in optical gain characteristics between AlGaN and InGaN lasers becomes small with increasing the degree of alloy compositional fluctuation.

Original languageEnglish
Title of host publication2016 International Semiconductor Laser Conference, ISLC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9784885523069
Publication statusPublished - 2016 Dec 2
Event2016 International Semiconductor Laser Conference, ISLC 2016 - Kobe, Japan
Duration: 2016 Sep 122016 Sep 15

Publication series

NameConference Digest - IEEE International Semiconductor Laser Conference
ISSN (Print)0899-9406

Other

Other2016 International Semiconductor Laser Conference, ISLC 2016
CountryJapan
CityKobe
Period16/9/1216/9/15

Keywords

  • III-nitride semiconductor materials
  • alloy compositional fluctuation
  • optical gain
  • semiconductor lasers

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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