All-electrical detection of spin Hall effect in semiconductors

Markus Ehlert, Cheng Song, Mariusz Ciorga, Thomas Hupfauer, Junichi Shiogai, Martin Utz, Dieter Schuh, Dominique Bougeard, Dieter Weiss

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Since the prediction of the spin Hall effect more than 40 years ago, significant progress was made in theoretical description as well as in experimental observation, especially in the last decade. In this article, we present three different concepts and measurement geometries for all-electrical detection of the direct and the inverse spin Hall effect in semiconductors. Based on experiments with n- and p-doped GaAs microstructures, we describe our experimental approaches and methods to experimentally identify the spin Hall effect and compare our results to previous experiments and theoretical considerations. Device geometry for the detection of the direct spin Hall effect.

Original languageEnglish
Pages (from-to)1725-1735
Number of pages11
JournalPhysica Status Solidi (B) Basic Research
Volume251
Issue number9
DOIs
Publication statusPublished - 2014 Sep 1

Keywords

  • Gallium arsenide
  • Nonlocal resistance
  • Spin Hall effect
  • Spin injection

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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