Alignment-free top-contact formation for organic thin film transistors with submicron-length channel

Iwao Yagi, Kunji Shigeto, Kazuhito Tsukagoshi, Yoshinobu Aoyagi

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We propose a simple fabrication method for self-aligned top contacts for an organic thin film transistor (TFT) that can be miniaturized. The self-aligned top electrodes are formed without any break in the vacuum condition after the formation of an organic channel on the substrate with a prefabricated insulating structure. As a demonstration of this method, pentacene TFTs with submicron-length channels have been fabricated and successfully operated. Scanning electron microscopy of TFTs reveals well-defined TFT structures as expected.

Original languageEnglish
Pages (from-to)L479-L481
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume44
Issue number16-19
DOIs
Publication statusPublished - 2005 Dec 1
Externally publishedYes

Keywords

  • Alignment-free fabrication
  • Organic thin film transistor
  • Pentacene
  • Submicron-length channel
  • Top-contact

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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