Abstract
We propose a simple fabrication method for self-aligned top contacts for an organic thin film transistor (TFT) that can be miniaturized. The self-aligned top electrodes are formed without any break in the vacuum condition after the formation of an organic channel on the substrate with a prefabricated insulating structure. As a demonstration of this method, pentacene TFTs with submicron-length channels have been fabricated and successfully operated. Scanning electron microscopy of TFTs reveals well-defined TFT structures as expected.
| Original language | English |
|---|---|
| Pages (from-to) | L479-L481 |
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 44 |
| Issue number | 16-19 |
| DOIs | |
| Publication status | Published - 2005 Dec 1 |
| Externally published | Yes |
Keywords
- Alignment-free fabrication
- Organic thin film transistor
- Pentacene
- Submicron-length channel
- Top-contact
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)
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Cite this
Yagi, I., Shigeto, K., Tsukagoshi, K., & Aoyagi, Y. (2005). Alignment-free top-contact formation for organic thin film transistors with submicron-length channel. Japanese Journal of Applied Physics, Part 2: Letters, 44(16-19), L479-L481. https://doi.org/10.1143/JJAP.44.L479