AlGaN/GaN/3C-SiC on diamond HEMTs with thick nitride layers prepared by bonding-first process

Ryo Kagawa; Keisuke Kawamura; Yoshiki Sakaida; Sumito Ouchi; Hiroki Uratani; Yasuo Shimizu; Yutaka Ohno; Yasuyoshi Nagai; Jianbo Liang; Naoteru Shigekawa

doi:10.35848/1882-0786/ac5ba7

AlGaN/GaN/3C-SiC on diamond HEMTs with thick nitride layers prepared by bonding-first process

Ryo Kagawa, Keisuke Kawamura, Yoshiki Sakaida, Sumito Ouchi, Hiroki Uratani, Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai, Jianbo Liang, Naoteru Shigekawa

Materials Design Division

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We fabricate AlGaN/GaN high electron mobility transistors (HEMTs) on diamond substrates by transferring 8 μm heterostructures grown on 3C-SiC/Si templates and subsequently applying the conventional device process steps. No exfoliation of 3C-SiC/diamond bonding interfaces is observed during 800 °C annealing, the essential step for forming ohmic contacts on nitrides. The thermal resistance of HEMTs on diamond is 35% of that of HEMTs on Si, which is assumed to be the origin of smaller negative drain conductance in on-diamond HEMTs. The results imply that the bonding-first process is applicable for fabricating low-thermal-resistance HEMTs with thick nitride layers.

Original language	English
Article number	041003
Journal	Applied Physics Express
Volume	15
Issue number	4
DOIs	https://doi.org/10.35848/1882-0786/ac5ba7
Publication status	Published - 2022 Apr

Keywords

3C-SiC
GaN-on-diamond
high electron mobility transistor
surface activated bonding
thermal resistance

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.35848/1882-0786/ac5ba7

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@article{4e4619330879495eb8d446616b7c36ab,

title = "AlGaN/GaN/3C-SiC on diamond HEMTs with thick nitride layers prepared by bonding-first process",

abstract = "We fabricate AlGaN/GaN high electron mobility transistors (HEMTs) on diamond substrates by transferring 8 μm heterostructures grown on 3C-SiC/Si templates and subsequently applying the conventional device process steps. No exfoliation of 3C-SiC/diamond bonding interfaces is observed during 800 °C annealing, the essential step for forming ohmic contacts on nitrides. The thermal resistance of HEMTs on diamond is 35% of that of HEMTs on Si, which is assumed to be the origin of smaller negative drain conductance in on-diamond HEMTs. The results imply that the bonding-first process is applicable for fabricating low-thermal-resistance HEMTs with thick nitride layers.",

keywords = "3C-SiC, GaN-on-diamond, high electron mobility transistor, surface activated bonding, thermal resistance",

author = "Ryo Kagawa and Keisuke Kawamura and Yoshiki Sakaida and Sumito Ouchi and Hiroki Uratani and Yasuo Shimizu and Yutaka Ohno and Yasuyoshi Nagai and Jianbo Liang and Naoteru Shigekawa",

note = "Funding Information: This research was supported by the Adaptable and Seamless Technology Transfer Program through Target-Driven R&D (A-STEP) from Japan Science and Technology Agency (JST) Grant Number JPMJTM20Q7. The fabrication and SEM observation of the samples were performed at the Oarai Center and at the Laboratory of Alpha-Ray Emitters in IMR under the Inter-University Cooperative Research in IMR of Tohoku University (202012-IRKMA-0046). Publisher Copyright: {\textcopyright} 2022 The Japan Society of Applied Physics.",

year = "2022",

month = apr,

doi = "10.35848/1882-0786/ac5ba7",

language = "English",

volume = "15",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "4",

}

TY - JOUR

T1 - AlGaN/GaN/3C-SiC on diamond HEMTs with thick nitride layers prepared by bonding-first process

AU - Kagawa, Ryo

AU - Kawamura, Keisuke

AU - Sakaida, Yoshiki

AU - Ouchi, Sumito

AU - Uratani, Hiroki

AU - Shimizu, Yasuo

AU - Ohno, Yutaka

AU - Nagai, Yasuyoshi

AU - Liang, Jianbo

AU - Shigekawa, Naoteru

N1 - Funding Information: This research was supported by the Adaptable and Seamless Technology Transfer Program through Target-Driven R&D (A-STEP) from Japan Science and Technology Agency (JST) Grant Number JPMJTM20Q7. The fabrication and SEM observation of the samples were performed at the Oarai Center and at the Laboratory of Alpha-Ray Emitters in IMR under the Inter-University Cooperative Research in IMR of Tohoku University (202012-IRKMA-0046). Publisher Copyright: © 2022 The Japan Society of Applied Physics.

PY - 2022/4

Y1 - 2022/4

N2 - We fabricate AlGaN/GaN high electron mobility transistors (HEMTs) on diamond substrates by transferring 8 μm heterostructures grown on 3C-SiC/Si templates and subsequently applying the conventional device process steps. No exfoliation of 3C-SiC/diamond bonding interfaces is observed during 800 °C annealing, the essential step for forming ohmic contacts on nitrides. The thermal resistance of HEMTs on diamond is 35% of that of HEMTs on Si, which is assumed to be the origin of smaller negative drain conductance in on-diamond HEMTs. The results imply that the bonding-first process is applicable for fabricating low-thermal-resistance HEMTs with thick nitride layers.

AB - We fabricate AlGaN/GaN high electron mobility transistors (HEMTs) on diamond substrates by transferring 8 μm heterostructures grown on 3C-SiC/Si templates and subsequently applying the conventional device process steps. No exfoliation of 3C-SiC/diamond bonding interfaces is observed during 800 °C annealing, the essential step for forming ohmic contacts on nitrides. The thermal resistance of HEMTs on diamond is 35% of that of HEMTs on Si, which is assumed to be the origin of smaller negative drain conductance in on-diamond HEMTs. The results imply that the bonding-first process is applicable for fabricating low-thermal-resistance HEMTs with thick nitride layers.

KW - 3C-SiC

KW - GaN-on-diamond

KW - high electron mobility transistor

KW - surface activated bonding

KW - thermal resistance

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U2 - 10.35848/1882-0786/ac5ba7

DO - 10.35848/1882-0786/ac5ba7

M3 - Article

AN - SCOPUS:85127283126

SN - 1882-0778

VL - 15

JO - Applied Physics Express

JF - Applied Physics Express

IS - 4

M1 - 041003

ER -

AlGaN/GaN/3C-SiC on diamond HEMTs with thick nitride layers prepared by bonding-first process

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