AlGaN/GaN/3C-SiC on diamond HEMTs with thick nitride layers prepared by bonding-first process

Ryo Kagawa, Keisuke Kawamura, Yoshiki Sakaida, Sumito Ouchi, Hiroki Uratani, Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai, Jianbo Liang, Naoteru Shigekawa

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


We fabricate AlGaN/GaN high electron mobility transistors (HEMTs) on diamond substrates by transferring 8 μm heterostructures grown on 3C-SiC/Si templates and subsequently applying the conventional device process steps. No exfoliation of 3C-SiC/diamond bonding interfaces is observed during 800 °C annealing, the essential step for forming ohmic contacts on nitrides. The thermal resistance of HEMTs on diamond is 35% of that of HEMTs on Si, which is assumed to be the origin of smaller negative drain conductance in on-diamond HEMTs. The results imply that the bonding-first process is applicable for fabricating low-thermal-resistance HEMTs with thick nitride layers.

Original languageEnglish
Article number041003
JournalApplied Physics Express
Issue number4
Publication statusPublished - 2022 Apr


  • 3C-SiC
  • GaN-on-diamond
  • high electron mobility transistor
  • surface activated bonding
  • thermal resistance

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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