AlGaN/GaN MIS-gate HEMTs with SiCN gate stacks

Physics

• Annealing 33%
• Collapse 33%
• High Electron Mobility Transistors 100%
• Hydrogen 66%
• Insulators 100%
• Metal 100%
• Performance 33%
• Semiconductor 100%
• Vapor 33%

Engineering

• Annealing 33%
• Carrier Gas 33%
• Current Drain 33%
• Current Gain 33%
• Cutoff Frequency 33%
• Density 33%
• Gate Length 33%
• Gate Stack 66%
• Performance 33%

Material Science

• Devices 33%
• Semiconductor Material 100%
• Vapor 33%