AlGaN/GaN HEMTs with Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications

Yen Ku Lin, Shuichi Noda, Hsiao Chieh Lo, Shih Chien Liu, Chia Hsun Wu, Yuen Yee Wong, Quang Ho Luc, Po Chun Chang, Heng Tung Hsu, Seiji Samukawa, Edward Yi Chang

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

The electrical performances of gate-recessed AlGaN/GaN high-electron mobility transistors (HEMTs) fabricated using the damage-free neutral beam etching (NBE) method are demonstrated. The NBE method could eliminate the plasma-induced defects generated by irradiating ultraviolet/VUV photons in the conventional inductively coupled plasma reactive ion etching method. The AlGaN/GaN HEMT device fabricated using the new gate recess process exhibited superior electrical performances, including a maximum drain current density (IDS,max) of 1.54 A/mm, low 1/f noise, a current-gain cutoff frequency (fT) of 153 GHz, a maximum frequency of oscillation (fMAX) of 167 GHz, and a minimum noise figure (NFmin) of 3.28 dB with an associated gain (GAS) of 5.06 dB at 54 GHz. Such superior characteristics confirm the inherent advantages of adopting the damage-free NBE process in fabricating GaN devices for millimeter-wave applications.

Original languageEnglish
Article number7569098
Pages (from-to)1395-1398
Number of pages4
JournalIEEE Electron Device Letters
Volume37
Issue number11
DOIs
Publication statusPublished - 2016 Nov

Keywords

  • AlGaN/GaN
  • HEMT
  • gate recess
  • high frequency measurement
  • neutral beam etching

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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