Abstract
We have fabricated dual-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) with a short gate on SiC substrates for use in high-power mixers and have measured their pulse modulation characteristics. A device with a T-shaped gate (0.15 μm × 200 μm) modulates a 24-GHz local (LO) signal with 0.4-ns-wide pulses. The peak output power is as high as 8.9 dBm and the bandwidth is over 2 GHz. These results indicate that this high-power mixer can directly drive an antenna and is applicable for 24-GHz ultra-wideband (UWB) applications.
Original language | English |
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Article number | 4015170 |
Pages (from-to) | 1331-1334 |
Number of pages | 4 |
Journal | IEEE MTT-S International Microwave Symposium Digest |
DOIs | |
Publication status | Published - 2006 Dec 1 |
Externally published | Yes |
Event | 2006 IEEE MTT-S International Microwave Symposium Digest - San Francisco, CA, United States Duration: 2006 Jun 11 → 2006 Jun 16 |
Keywords
- Microwave mixers
- Power MODFETs
- Power semiconductor devices
- Pulse modulation
- Semiconductor device fabrication
ASJC Scopus subject areas
- Radiation
- Condensed Matter Physics
- Electrical and Electronic Engineering