AlGaN/GaN dual-gate HEMT mixers for 24 GHz pulse-modulation

Kenji Shiojima; Takashi Makimura; Toshihiko Kosugi; Tetsuya Suemitsu; Naoteru Shigekawa; Masanobu Hiroki; Haruki Yokoyama

doi:10.1109/MWSYM.2006.249494

AlGaN/GaN dual-gate HEMT mixers for 24 GHz pulse-modulation

Kenji Shiojima, Takashi Makimura, Toshihiko Kosugi, Tetsuya Suemitsu, Naoteru Shigekawa, Masanobu Hiroki, Haruki Yokoyama

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

We have fabricated dual-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) with a short gate on SiC substrates for use in high-power mixers and have measured their pulse modulation characteristics. A device with a T-shaped gate (0.15 μm × 200 μm) modulates a 24-GHz local (LO) signal with 0.4-ns-wide pulses. The peak output power is as high as 8.9 dBm and the bandwidth is over 2 GHz. These results indicate that this high-power mixer can directly drive an antenna and is applicable for 24-GHz ultra-wideband (UWB) applications.

Original language	English
Article number	4015170
Pages (from-to)	1331-1334
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
DOIs	https://doi.org/10.1109/MWSYM.2006.249494
Publication status	Published - 2006 Dec 1
Externally published	Yes
Event	2006 IEEE MTT-S International Microwave Symposium Digest - San Francisco, CA, United States Duration: 2006 Jun 11 → 2006 Jun 16

Keywords

Microwave mixers
Power MODFETs
Power semiconductor devices
Pulse modulation
Semiconductor device fabrication

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

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Cite this

@article{2d8500d4823c4140aadcce4489dbb494,

title = "AlGaN/GaN dual-gate HEMT mixers for 24 GHz pulse-modulation",

abstract = "We have fabricated dual-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) with a short gate on SiC substrates for use in high-power mixers and have measured their pulse modulation characteristics. A device with a T-shaped gate (0.15 μm × 200 μm) modulates a 24-GHz local (LO) signal with 0.4-ns-wide pulses. The peak output power is as high as 8.9 dBm and the bandwidth is over 2 GHz. These results indicate that this high-power mixer can directly drive an antenna and is applicable for 24-GHz ultra-wideband (UWB) applications.",

keywords = "Microwave mixers, Power MODFETs, Power semiconductor devices, Pulse modulation, Semiconductor device fabrication",

author = "Kenji Shiojima and Takashi Makimura and Toshihiko Kosugi and Tetsuya Suemitsu and Naoteru Shigekawa and Masanobu Hiroki and Haruki Yokoyama",

year = "2006",

month = dec,

day = "1",

doi = "10.1109/MWSYM.2006.249494",

language = "English",

pages = "1331--1334",

journal = "IEEE MTT-S International Microwave Symposium Digest",

issn = "0149-645X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2006 IEEE MTT-S International Microwave Symposium Digest ; Conference date: 11-06-2006 Through 16-06-2006",

}

TY - JOUR

T1 - AlGaN/GaN dual-gate HEMT mixers for 24 GHz pulse-modulation

AU - Shiojima, Kenji

AU - Makimura, Takashi

AU - Kosugi, Toshihiko

AU - Suemitsu, Tetsuya

AU - Shigekawa, Naoteru

AU - Hiroki, Masanobu

AU - Yokoyama, Haruki

PY - 2006/12/1

Y1 - 2006/12/1

N2 - We have fabricated dual-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) with a short gate on SiC substrates for use in high-power mixers and have measured their pulse modulation characteristics. A device with a T-shaped gate (0.15 μm × 200 μm) modulates a 24-GHz local (LO) signal with 0.4-ns-wide pulses. The peak output power is as high as 8.9 dBm and the bandwidth is over 2 GHz. These results indicate that this high-power mixer can directly drive an antenna and is applicable for 24-GHz ultra-wideband (UWB) applications.

AB - We have fabricated dual-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) with a short gate on SiC substrates for use in high-power mixers and have measured their pulse modulation characteristics. A device with a T-shaped gate (0.15 μm × 200 μm) modulates a 24-GHz local (LO) signal with 0.4-ns-wide pulses. The peak output power is as high as 8.9 dBm and the bandwidth is over 2 GHz. These results indicate that this high-power mixer can directly drive an antenna and is applicable for 24-GHz ultra-wideband (UWB) applications.

KW - Microwave mixers

KW - Power MODFETs

KW - Power semiconductor devices

KW - Pulse modulation

KW - Semiconductor device fabrication

UR - http://www.scopus.com/inward/record.url?scp=34250369679&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34250369679&partnerID=8YFLogxK

U2 - 10.1109/MWSYM.2006.249494

DO - 10.1109/MWSYM.2006.249494

M3 - Conference article

AN - SCOPUS:34250369679

SP - 1331

EP - 1334

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

SN - 0149-645X

M1 - 4015170

T2 - 2006 IEEE MTT-S International Microwave Symposium Digest

Y2 - 11 June 2006 through 16 June 2006

ER -