AlGaAs/InGaAs/GaAs single electron transistors fabricated by Ga focused ion beam implantation

Toshimasa Fujisawa, Yoshiro Hirayama, Seigo Tarucha

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20 Citations (Scopus)

Abstract

Single electron transistors are formed in an AlGaAs/InGaAs/GaAs modulation-doped heterostructure by Ga focused ion beam implantation. The AlGaAs/InGaAs/GaAs system has a high two-dimensional electron gas density and facilitates a lateral constriction whose depletion length is much smaller than that in a conventional AlGaAs/GaAs system. A dot structure confined by a small depletion spreading of less than 0.15 μm is formed by the ion implantation. This ion implantation is also employed to form in-plane gates for controlling the tunneling junctions between the dot and reservoirs, and the number of electrons in the dot. Coulomb oscillations and a Coulomb staircase have been clearly observed by controlling three in-plane gates.

Original languageEnglish
Pages (from-to)2250-2252
Number of pages3
JournalApplied Physics Letters
Volume64
Issue number17
DOIs
Publication statusPublished - 1994
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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