Al//2O//3/NATIVE OXIDE DOUBLE-LAYER MIS STRUCTURE FOR InP MISFET IC'S.

Takayuki Sawada, Hideki Hasegawa, Hideo Ohno, Shin Itagaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

InP MISFETs with Al//2O//3/native oxide double-layer gate insulators grown by simple anodization processes in electrolyte and in oxygen plasma have been investigated. Device performance was greatly improved by adding thin native oxide intermediate layer, showing effective electron mobilities of 1500-3000 cm**2/V. s with marked reduction of the current instability. A mechanism of the current drift was proposed, concerning to usual interface states below semiconductor conduction band edge. Feasibility of the double-layer gate MISFET ICs was also demonstrated by E/D inverters and ring oscillators.

Original languageEnglish
Title of host publicationConference on Solid State Devices and Materials
PublisherBusiness Cent for Academic Soc Japan
Pages367-370
Number of pages4
ISBN (Print)4930813077
Publication statusPublished - 1984 Dec 1
Externally publishedYes

Publication series

NameConference on Solid State Devices and Materials

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Sawada, T., Hasegawa, H., Ohno, H., & Itagaki, S. (1984). Al//2O//3/NATIVE OXIDE DOUBLE-LAYER MIS STRUCTURE FOR InP MISFET IC'S. In Conference on Solid State Devices and Materials (pp. 367-370). (Conference on Solid State Devices and Materials). Business Cent for Academic Soc Japan.