Al concentration dependence of crystal structure for Ca3Ta(Ga,Al)3Si2O14 piezoelectric single crystals

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Al concentration dependence of the crystal structure on Ca3Ta(Ga1-xAlx)Si2O14 (CTGAS) piezoelectric single crystals were investigated by X-ray crystal structure analysis. O(2)-Si-O(2) and Si-O(2)-(Ga,Al) bond angles systematically increased with increasing Al concentration, and the result suggests that the increase of structural anisotropy by the Al substitution is attributable to the planarization of the O(2)-Si-O(2)-(Ga,Al). In addition, (Ga,Al)-O(2), (Ga,Al)-O(3) and Ca-O(1) bond lengths systematically decreased with increasing the Al substitution. The cation shift of the Si and (Ga,Al) ions out of center from the barycenter of the oxygen coordination environment decreased with increasing Al concentration.

Original languageEnglish
Pages (from-to)195-200
Number of pages6
JournalJournal of Solid State Chemistry
Publication statusPublished - 2019 Sep


  • Al substitution
  • CaTa(GaAl)SiO
  • Crystal structure
  • Piezoelectric material
  • Single crystal

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Physical and Theoretical Chemistry
  • Inorganic Chemistry
  • Materials Chemistry


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