Air-stable p-n junction diodes based on single-walled carbon nanotubes encapsulating Fe nanoparticles

Y. F. Li, R. Hatakeyama, J. Shishido, Toshiaki Kato, Toshiro Kaneko

Research output: Contribution to journalArticlepeer-review

49 Citations (Scopus)

Abstract

The authors report electrical transport properties of p-n junction based on semiconducting single-walled carbon nanotubes (SWCNTs). The formation of p-n junction is realized in SWCNTs, which are encapsulated with Fe nanoparticles at low filling fractions. The devices exhibit an excellent rectifying behavior, and no current down to 10-14 A level flows when the device is biased in reverse. During measurements performed in the temperature range from 10 to 300 K, the devices maintain high reproducibility. More importantly, even after exposure to air, the rectifying characteristic keeps stable, which strongly suggests that ideal p-n junction diodes can be fabricated by SWCNTs.

Original languageEnglish
Article number173127
JournalApplied Physics Letters
Volume90
Issue number17
DOIs
Publication statusPublished - 2007 May 21

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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