Film bulk acoustic resonator (FBAR) was fabricated using A1N(0002) film. We achieved the high oriented A1N(0002) film through the metal-organic chemical vapor deposition (MOCVD) method on Ru/Ta bottom electrode. But thermal stress of A1N film was a problem in the high temperature MOCVD process over 1000 °C. To reduce the thermal stress of A1N film, the low temperature A1N film growth was needed. We investigated the influence of H2 and N2 carrier gas in the MOCVD process to the A1N film quality. The full width at half maximum (FWHM) of the A1N(0002) using the N2 carrier gas was better than that of the H2 gas at the low temperature. Then the A1N cracks was reduced by the low temperature A1N growth. Furthermore, the FWHM of A1N(0002) using H2 and N2 gases at the MOCVD method were excellent value of under 1.5 ° at less than 0.5 μm thickness.
|Number of pages||4|
|Journal||Proceedings - IEEE Ultrasonics Symposium|
|Publication status||Published - 2008 Dec 1|
|Event||2008 IEEE International Ultrasonics Symposium, IUS 2008 - Beijing, China|
Duration: 2008 Nov 2 → 2008 Nov 5
ASJC Scopus subject areas
- Acoustics and Ultrasonics