AIN film using low temperature MOCVD process for FBAR

Y. Aota; S. Tanifuji; H. Oguma; Suguru Kameda; T. Takag; K. Tsubouchi

doi:10.1109/ULTSYM.2008.0544

AIN film using low temperature MOCVD process for FBAR

Y. Aota, S. Tanifuji, H. Oguma, Suguru Kameda, T. Takag, K. Tsubouchi

Broadband Engineering Division

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

Film bulk acoustic resonator (FBAR) was fabricated using A1N(0002) film. We achieved the high oriented A1N(0002) film through the metal-organic chemical vapor deposition (MOCVD) method on Ru/Ta bottom electrode. But thermal stress of A1N film was a problem in the high temperature MOCVD process over 1000 °C. To reduce the thermal stress of A1N film, the low temperature A1N film growth was needed. We investigated the influence of H₂ and N₂ carrier gas in the MOCVD process to the A1N film quality. The full width at half maximum (FWHM) of the A1N(0002) using the N₂ carrier gas was better than that of the H₂ gas at the low temperature. Then the A1N cracks was reduced by the low temperature A1N growth. Furthermore, the FWHM of A1N(0002) using H₂ and N₂ gases at the MOCVD method were excellent value of under 1.5 ° at less than 0.5 μm thickness.

Original language	English
Article number	4803450
Pages (from-to)	2197-2200
Number of pages	4
Journal	Proceedings - IEEE Ultrasonics Symposium
DOIs	https://doi.org/10.1109/ULTSYM.2008.0544
Publication status	Published - 2008 Dec 1
Event	2008 IEEE International Ultrasonics Symposium, IUS 2008 - Beijing, China Duration: 2008 Nov 2 → 2008 Nov 5

ASJC Scopus subject areas

Acoustics and Ultrasonics

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10.1109/ULTSYM.2008.0544

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title = "AIN film using low temperature MOCVD process for FBAR",

abstract = "Film bulk acoustic resonator (FBAR) was fabricated using A1N(0002) film. We achieved the high oriented A1N(0002) film through the metal-organic chemical vapor deposition (MOCVD) method on Ru/Ta bottom electrode. But thermal stress of A1N film was a problem in the high temperature MOCVD process over 1000 °C. To reduce the thermal stress of A1N film, the low temperature A1N film growth was needed. We investigated the influence of H2 and N2 carrier gas in the MOCVD process to the A1N film quality. The full width at half maximum (FWHM) of the A1N(0002) using the N2 carrier gas was better than that of the H2 gas at the low temperature. Then the A1N cracks was reduced by the low temperature A1N growth. Furthermore, the FWHM of A1N(0002) using H2 and N2 gases at the MOCVD method were excellent value of under 1.5 ° at less than 0.5 μm thickness.",

author = "Y. Aota and S. Tanifuji and H. Oguma and Suguru Kameda and T. Takag and K. Tsubouchi",

year = "2008",

month = dec,

day = "1",

doi = "10.1109/ULTSYM.2008.0544",

language = "English",

pages = "2197--2200",

journal = "Proceedings - IEEE Ultrasonics Symposium",

issn = "1051-0117",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2008 IEEE International Ultrasonics Symposium, IUS 2008 ; Conference date: 02-11-2008 Through 05-11-2008",

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TY - JOUR

T1 - AIN film using low temperature MOCVD process for FBAR

AU - Aota, Y.

AU - Tanifuji, S.

AU - Oguma, H.

AU - Kameda, Suguru

AU - Takag, T.

AU - Tsubouchi, K.

PY - 2008/12/1

Y1 - 2008/12/1

N2 - Film bulk acoustic resonator (FBAR) was fabricated using A1N(0002) film. We achieved the high oriented A1N(0002) film through the metal-organic chemical vapor deposition (MOCVD) method on Ru/Ta bottom electrode. But thermal stress of A1N film was a problem in the high temperature MOCVD process over 1000 °C. To reduce the thermal stress of A1N film, the low temperature A1N film growth was needed. We investigated the influence of H2 and N2 carrier gas in the MOCVD process to the A1N film quality. The full width at half maximum (FWHM) of the A1N(0002) using the N2 carrier gas was better than that of the H2 gas at the low temperature. Then the A1N cracks was reduced by the low temperature A1N growth. Furthermore, the FWHM of A1N(0002) using H2 and N2 gases at the MOCVD method were excellent value of under 1.5 ° at less than 0.5 μm thickness.

AB - Film bulk acoustic resonator (FBAR) was fabricated using A1N(0002) film. We achieved the high oriented A1N(0002) film through the metal-organic chemical vapor deposition (MOCVD) method on Ru/Ta bottom electrode. But thermal stress of A1N film was a problem in the high temperature MOCVD process over 1000 °C. To reduce the thermal stress of A1N film, the low temperature A1N film growth was needed. We investigated the influence of H2 and N2 carrier gas in the MOCVD process to the A1N film quality. The full width at half maximum (FWHM) of the A1N(0002) using the N2 carrier gas was better than that of the H2 gas at the low temperature. Then the A1N cracks was reduced by the low temperature A1N growth. Furthermore, the FWHM of A1N(0002) using H2 and N2 gases at the MOCVD method were excellent value of under 1.5 ° at less than 0.5 μm thickness.

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DO - 10.1109/ULTSYM.2008.0544

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