Agglomeration of copper thin film in Cu/Ta/Si structure

Joon Woo Bae, Jae Won Lim, Kouji Mimura, Minoru Isshiki

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


Copper agglomeration in Cu(100nm)/Ta(50nm)/Si structure deposited by ion beam deposition was examined. Copper thin films were annealed at 650°C for 1 to 60 min in hydrogen atmosphere. The surface morphology, crystalline microstructure and electrical resistivity were investigated by field-emission scanning electron microscopy, X-ray diffraction and Van der Pauw method, respectively. Experimental results revealed that nucleation and growth of voids ocurred in the copper film annealed for 5 min. Further annealing made the film a connected island structure and then isolated island structure.

Original languageEnglish
Pages (from-to)877-879
Number of pages3
JournalMaterials Transactions
Issue number3
Publication statusPublished - 2004 Mar


  • Agglomeration
  • Copper
  • Resistivity
  • Thin film
  • Void

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'Agglomeration of copper thin film in Cu/Ta/Si structure'. Together they form a unique fingerprint.

Cite this