Abstract
Copper agglomeration in Cu(100nm)/Ta(50nm)/Si structure deposited by ion beam deposition was examined. Copper thin films were annealed at 650°C for 1 to 60 min in hydrogen atmosphere. The surface morphology, crystalline microstructure and electrical resistivity were investigated by field-emission scanning electron microscopy, X-ray diffraction and Van der Pauw method, respectively. Experimental results revealed that nucleation and growth of voids ocurred in the copper film annealed for 5 min. Further annealing made the film a connected island structure and then isolated island structure.
| Original language | English |
|---|---|
| Pages (from-to) | 877-879 |
| Number of pages | 3 |
| Journal | Materials Transactions |
| Volume | 45 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2004 Mar |
Keywords
- Agglomeration
- Copper
- Resistivity
- Thin film
- Void
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
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Cite this
Bae, J. W., Lim, J. W., Mimura, K., & Isshiki, M. (2004). Agglomeration of copper thin film in Cu/Ta/Si structure. Materials Transactions, 45(3), 877-879. https://doi.org/10.2320/matertrans.45.877