Agglomeration of copper thin film in Cu/Ta/Si structure

Joon Woo Bae; Jae Won Lim; Kouji Mimura; Minoru Isshiki

doi:10.2320/matertrans.45.877

Agglomeration of copper thin film in Cu/Ta/Si structure

Joon Woo Bae, Jae Won Lim, Kouji Mimura, Minoru Isshiki

Division of Inorganic Material Research

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Copper agglomeration in Cu(100nm)/Ta(50nm)/Si structure deposited by ion beam deposition was examined. Copper thin films were annealed at 650°C for 1 to 60 min in hydrogen atmosphere. The surface morphology, crystalline microstructure and electrical resistivity were investigated by field-emission scanning electron microscopy, X-ray diffraction and Van der Pauw method, respectively. Experimental results revealed that nucleation and growth of voids ocurred in the copper film annealed for 5 min. Further annealing made the film a connected island structure and then isolated island structure.

Original language	English
Pages (from-to)	877-879
Number of pages	3
Journal	Materials Transactions
Volume	45
Issue number	3
DOIs	https://doi.org/10.2320/matertrans.45.877
Publication status	Published - 2004 Mar

Keywords

Agglomeration
Copper
Resistivity
Thin film
Void

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.2320/matertrans.45.877

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title = "Agglomeration of copper thin film in Cu/Ta/Si structure",

abstract = "Copper agglomeration in Cu(100nm)/Ta(50nm)/Si structure deposited by ion beam deposition was examined. Copper thin films were annealed at 650°C for 1 to 60 min in hydrogen atmosphere. The surface morphology, crystalline microstructure and electrical resistivity were investigated by field-emission scanning electron microscopy, X-ray diffraction and Van der Pauw method, respectively. Experimental results revealed that nucleation and growth of voids ocurred in the copper film annealed for 5 min. Further annealing made the film a connected island structure and then isolated island structure.",

keywords = "Agglomeration, Copper, Resistivity, Thin film, Void",

author = "Bae, {Joon Woo} and Lim, {Jae Won} and Kouji Mimura and Minoru Isshiki",

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doi = "10.2320/matertrans.45.877",

language = "English",

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T1 - Agglomeration of copper thin film in Cu/Ta/Si structure

AU - Bae, Joon Woo

AU - Lim, Jae Won

AU - Mimura, Kouji

AU - Isshiki, Minoru

PY - 2004/3

Y1 - 2004/3

N2 - Copper agglomeration in Cu(100nm)/Ta(50nm)/Si structure deposited by ion beam deposition was examined. Copper thin films were annealed at 650°C for 1 to 60 min in hydrogen atmosphere. The surface morphology, crystalline microstructure and electrical resistivity were investigated by field-emission scanning electron microscopy, X-ray diffraction and Van der Pauw method, respectively. Experimental results revealed that nucleation and growth of voids ocurred in the copper film annealed for 5 min. Further annealing made the film a connected island structure and then isolated island structure.

AB - Copper agglomeration in Cu(100nm)/Ta(50nm)/Si structure deposited by ion beam deposition was examined. Copper thin films were annealed at 650°C for 1 to 60 min in hydrogen atmosphere. The surface morphology, crystalline microstructure and electrical resistivity were investigated by field-emission scanning electron microscopy, X-ray diffraction and Van der Pauw method, respectively. Experimental results revealed that nucleation and growth of voids ocurred in the copper film annealed for 5 min. Further annealing made the film a connected island structure and then isolated island structure.

KW - Agglomeration

KW - Copper

KW - Resistivity

KW - Thin film

KW - Void

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Agglomeration of copper thin film in Cu/Ta/Si structure

Abstract

Keywords

ASJC Scopus subject areas

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