AFM and XPS studies of a homoepitaxial diamond (001) surface nitrided using 500-eV N2+ ion beam

I. Kusunoki, Y. Igari, S. Ishidzuka, T. Takami, Tsuyoshi Takaoka, M. Nishitani-Gamo, T. Ando

    Research output: Contribution to journalArticlepeer-review

    Abstract

    A homoepitaxially grown p-type diamond (001) surface was nitrided by irradiation with a 500-eV N2+ ion beam. X-Ray photoelectron spectra (XPS) were taken in situ during the nitridation. The C1s and N1s XPS spectra were divided into three (A, ~ 284.7; B, ~ 285.6; and C, ~ 287.3 eV) and four (D, ~ 398.4; E, ~ 399.5; F, ~ 401.0; and G, ~ 1403.3 eV) components, respectively. The A component of the C1s core level originated from the diamond substrate lying under the nitrogen penetration zone. The B and C components came from the nitrogen-diluted layer and from the carbon nitrides, respectively. The composition ratio of nitrogen/carbon in the C phase, ND+F/CC, was 0.71. The Nall/CB+C ratio was 0.25. The morphology of the surface was also measured in air by atomic force microscope (AFM). It was found that grain-like material covered the surface after nitridation. A typical grain size was approximately 50 nm in diameter with a height of 5 nm. However, the grains themselves were not carbon nitrides. The crystallinity of the nitride was investigated using reflection high-energy electron diffraction (RHEED), but the formation of β-C3N4 could not be confirmed from the RHEED patterns, due to overlapping with the twin structures of diamond.

    Original languageEnglish
    Pages (from-to)1676-1680
    Number of pages5
    JournalDiamond and Related Materials
    Volume10
    Issue number9-10
    DOIs
    Publication statusPublished - 2001 Sep 1

    Keywords

    • Carbon nitride
    • Diamond
    • Nitridation
    • X-Ray photoelectron spectroscopy (XPS)

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Chemistry(all)
    • Mechanical Engineering
    • Physics and Astronomy(all)
    • Materials Chemistry
    • Electrical and Electronic Engineering

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