AEM investigation of interface structure of Y2O 3-Ta2O5 co-doped zirconia buffer layer

Takanori Kiguchi, Naoki Wakiya, Kazuo Shinozaki, Nobuyasu Mizutani

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)


The effect of Ta doping on the growth of the SiOx layer in YSZ/Si gate dielectrics has been investigated by Analytical TEM (AEM) method. Most part of the YTaSZ layer has epitaxially grown like as YSZ layer. Capacitance-voltage (C-V) hysteresis of YTaSZ film has been suppressed perfectly. It has been, however, that the SiOx thickness of Ta doped YSZ/Si became thicker than YSZ/Si, and that the roughness of the interface between SiOx/Si has been increased. Density of interface trapped charge has been also increased. HRTEM and TEM-EDS analysis has revealed that some of the doped Ta was diffused into SiOx interface layer and the surface of Si substrate, which is thought to be the cause of interface trapped charge.

Original languageEnglish
Pages (from-to)237-240
Number of pages4
JournalKey Engineering Materials
Publication statusPublished - 2004 Jan 1
Externally publishedYes
EventProceedings of the 23rd Electronics Division Meeting of the Ceramic Society of Japan - Kawasaki, Japan
Duration: 2003 Oct 232003 Oct 24


  • Buffer layer
  • C-V characteristics
  • Depth profile
  • Interface trapped charge
  • SiO
  • TEM
  • TaO
  • Zirconia

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering


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