Advantages of silicon nanowire metal-oxide-semiconductor field-effect transistors over planar ones in noise properties

Wei Feng, Ranga Hettiarachchi, Soshi Sato, Kuniyuki Kakushima, Masaaki Niwa, Hiroshi Iwai, Keisaku Yamada, Kenji Ohmori

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)

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Engineering & Materials Science