TY - JOUR
T1 - Advantages of silicon nanowire metal-oxide-semiconductor field-effect transistors over planar ones in noise properties
AU - Feng, Wei
AU - Hettiarachchi, Ranga
AU - Sato, Soshi
AU - Kakushima, Kuniyuki
AU - Niwa, Masaaki
AU - Iwai, Hiroshi
AU - Yamada, Keisaku
AU - Ohmori, Kenji
PY - 2012/4
Y1 - 2012/4
N2 - We have investigated the low-frequency noise behavior of silicon nanowire metal-oxide-semiconductor field-effect transistors (NWFETs) by comparison with that of a planar FET. We have found that the NWFET exhibits lower noise intensity than the planar FET. By analyzing the factors influential to noise intensity, one of the most possible origins of this advantage of the NWFET results from the electron distribution in the channel in NWFET. Owing to quantum confinement, the position of charge-centroids in the channel of NWFET is located further from the interface, resulting in the lower trapping probability between the electrons and oxide traps. These results clearly demonstrate the advantage of three-dimensional structures in static and noise properties.
AB - We have investigated the low-frequency noise behavior of silicon nanowire metal-oxide-semiconductor field-effect transistors (NWFETs) by comparison with that of a planar FET. We have found that the NWFET exhibits lower noise intensity than the planar FET. By analyzing the factors influential to noise intensity, one of the most possible origins of this advantage of the NWFET results from the electron distribution in the channel in NWFET. Owing to quantum confinement, the position of charge-centroids in the channel of NWFET is located further from the interface, resulting in the lower trapping probability between the electrons and oxide traps. These results clearly demonstrate the advantage of three-dimensional structures in static and noise properties.
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U2 - 10.1143/JJAP.51.04DC06
DO - 10.1143/JJAP.51.04DC06
M3 - Article
AN - SCOPUS:84860369398
VL - 51
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 PART 2
M1 - 04DC06
ER -