Advantages of silicon nanowire metal-oxide-semiconductor field-effect transistors over planar ones in noise properties

Wei Feng, Ranga Hettiarachchi, Soshi Sato, Kuniyuki Kakushima, Masaaki Niwa, Hiroshi Iwai, Keisaku Yamada, Kenji Ohmori

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

We have investigated the low-frequency noise behavior of silicon nanowire metal-oxide-semiconductor field-effect transistors (NWFETs) by comparison with that of a planar FET. We have found that the NWFET exhibits lower noise intensity than the planar FET. By analyzing the factors influential to noise intensity, one of the most possible origins of this advantage of the NWFET results from the electron distribution in the channel in NWFET. Owing to quantum confinement, the position of charge-centroids in the channel of NWFET is located further from the interface, resulting in the lower trapping probability between the electrons and oxide traps. These results clearly demonstrate the advantage of three-dimensional structures in static and noise properties.

Original languageEnglish
Article number04DC06
JournalJapanese journal of applied physics
Volume51
Issue number4 PART 2
DOIs
Publication statusPublished - 2012 Apr

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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