Advantages and remaining issues of state-of-the-art m-plane freestanding GaN substrates grown by halide vapor phase epitaxy for m-plane InGaN epitaxial growth

F. Chichibu, M. Kagaya, P. Corfdir, Ganière J-D Ganière, B. Deveaud-Plédran, N. Grandjean, S. Kubo, K. Fujito, S. F. Chichibu, M. Kagaya, P. Corfdir, J. D. Ganière, B. Deveaud-Plédran, S. Kubo, K. Fujito

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