Advantage of the structure and the electrical properties of epitaxial ultra-thin zirconia gate dielectrics

Takanori Kiguchi; Naoki Wakiya; Junzo Tanaka; Kazuo Shinozaki

doi:10.1016/j.mseb.2007.09.037

Advantage of the structure and the electrical properties of epitaxial ultra-thin zirconia gate dielectrics

Takanori Kiguchi, Naoki Wakiya, Junzo Tanaka, Kazuo Shinozaki

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

For this study, the authors fabricated non-doped 0 0 1 epitaxial ZrO₂ gate dielectrics with small density of extrinsic defects and charges in the size effect. Wide-angle X-ray reciprocal space mapping and high-resolution transmission electron microscope (HRTEM) analyses showed many 90° and 180° domains. The 0 0 1 planes nearly align in the out-of-plane direction for 17-nm ZrO₂ thin films. On the other hand, the nanoscale monoclinic phase precipitated coherently in a tetragonal matrix for 3-nm ZrO₂ thin films. Capacitance-voltage (C-V) measurements suggest that the C-V curve of ZrO₂ thin film has a charge-injection type hysteresis. The width is 26 mV for the 17-nm ZrO₂ thin film and less than 2 mV for the 3-nm ZrO₂ ultra-thin film.

Original language	English
Pages (from-to)	30-34
Number of pages	5
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	148
Issue number	1-3
DOIs	https://doi.org/10.1016/j.mseb.2007.09.037
Publication status	Published - 2008 Feb 25
Externally published	Yes

Keywords

Gate dielectrics
Monoclinic phase
Size effect
Tetragonal phase
Transmission electron microscopy
Zirconia

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Advantage of the structure and the electrical properties of epitaxial ultra-thin zirconia gate dielectrics. / Kiguchi, Takanori; Wakiya, Naoki; Tanaka, Junzo; Shinozaki, Kazuo.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 148, No. 1-3, 25.02.2008, p. 30-34.

Research output: Contribution to journal › Article › peer-review

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title = "Advantage of the structure and the electrical properties of epitaxial ultra-thin zirconia gate dielectrics",

abstract = "For this study, the authors fabricated non-doped 0 0 1 epitaxial ZrO2 gate dielectrics with small density of extrinsic defects and charges in the size effect. Wide-angle X-ray reciprocal space mapping and high-resolution transmission electron microscope (HRTEM) analyses showed many 90° and 180° domains. The 0 0 1 planes nearly align in the out-of-plane direction for 17-nm ZrO2 thin films. On the other hand, the nanoscale monoclinic phase precipitated coherently in a tetragonal matrix for 3-nm ZrO2 thin films. Capacitance-voltage (C-V) measurements suggest that the C-V curve of ZrO2 thin film has a charge-injection type hysteresis. The width is 26 mV for the 17-nm ZrO2 thin film and less than 2 mV for the 3-nm ZrO2 ultra-thin film.",

keywords = "Gate dielectrics, Monoclinic phase, Size effect, Tetragonal phase, Transmission electron microscopy, Zirconia",

author = "Takanori Kiguchi and Naoki Wakiya and Junzo Tanaka and Kazuo Shinozaki",

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AU - Kiguchi, Takanori

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AU - Tanaka, Junzo

AU - Shinozaki, Kazuo

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AB - For this study, the authors fabricated non-doped 0 0 1 epitaxial ZrO2 gate dielectrics with small density of extrinsic defects and charges in the size effect. Wide-angle X-ray reciprocal space mapping and high-resolution transmission electron microscope (HRTEM) analyses showed many 90° and 180° domains. The 0 0 1 planes nearly align in the out-of-plane direction for 17-nm ZrO2 thin films. On the other hand, the nanoscale monoclinic phase precipitated coherently in a tetragonal matrix for 3-nm ZrO2 thin films. Capacitance-voltage (C-V) measurements suggest that the C-V curve of ZrO2 thin film has a charge-injection type hysteresis. The width is 26 mV for the 17-nm ZrO2 thin film and less than 2 mV for the 3-nm ZrO2 ultra-thin film.

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