Abstract
For this study, the authors fabricated non-doped 0 0 1 epitaxial ZrO2 gate dielectrics with small density of extrinsic defects and charges in the size effect. Wide-angle X-ray reciprocal space mapping and high-resolution transmission electron microscope (HRTEM) analyses showed many 90° and 180° domains. The 0 0 1 planes nearly align in the out-of-plane direction for 17-nm ZrO2 thin films. On the other hand, the nanoscale monoclinic phase precipitated coherently in a tetragonal matrix for 3-nm ZrO2 thin films. Capacitance-voltage (C-V) measurements suggest that the C-V curve of ZrO2 thin film has a charge-injection type hysteresis. The width is 26 mV for the 17-nm ZrO2 thin film and less than 2 mV for the 3-nm ZrO2 ultra-thin film.
Original language | English |
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Pages (from-to) | 30-34 |
Number of pages | 5 |
Journal | Materials Science and Engineering B: Solid-State Materials for Advanced Technology |
Volume | 148 |
Issue number | 1-3 |
DOIs | |
Publication status | Published - 2008 Feb 25 |
Externally published | Yes |
Keywords
- Gate dielectrics
- Monoclinic phase
- Size effect
- Tetragonal phase
- Transmission electron microscopy
- Zirconia
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering