Advantage of the structure and the electrical properties of epitaxial ultra-thin zirconia gate dielectrics

Takanori Kiguchi, Naoki Wakiya, Junzo Tanaka, Kazuo Shinozaki

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

For this study, the authors fabricated non-doped 0 0 1 epitaxial ZrO2 gate dielectrics with small density of extrinsic defects and charges in the size effect. Wide-angle X-ray reciprocal space mapping and high-resolution transmission electron microscope (HRTEM) analyses showed many 90° and 180° domains. The 0 0 1 planes nearly align in the out-of-plane direction for 17-nm ZrO2 thin films. On the other hand, the nanoscale monoclinic phase precipitated coherently in a tetragonal matrix for 3-nm ZrO2 thin films. Capacitance-voltage (C-V) measurements suggest that the C-V curve of ZrO2 thin film has a charge-injection type hysteresis. The width is 26 mV for the 17-nm ZrO2 thin film and less than 2 mV for the 3-nm ZrO2 ultra-thin film.

Original languageEnglish
Pages (from-to)30-34
Number of pages5
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume148
Issue number1-3
DOIs
Publication statusPublished - 2008 Feb 25
Externally publishedYes

Keywords

  • Gate dielectrics
  • Monoclinic phase
  • Size effect
  • Tetragonal phase
  • Transmission electron microscopy
  • Zirconia

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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