Advantage of silicon nitride gate insulator transistor by using microwave-excited high-density plasma for applying 100nm technology node

Shigetoshi Sugawa, Ichiro Ohshima, Hideaki Ishino, Yuji Saito, Masaki Hirayama, Tadahiro Ohmi

Research output: Contribution to journalConference articlepeer-review

38 Citations (Scopus)

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