This paper focuses attention on advantage of oxygen radical oxidation by microwave-excited high-density Kr/O2 plasma for improving disadvantages of conventional thermal oxidation process using H2O and/or O2 molecule, and demonstrates that Kr/O2 plasma oxidation process can improve thickness variation on shallow-trench isolation and integrity of silicon oxide not only on (100) surface but also on (111) surface compared to those of conventional thermal oxidation process.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|Publication status||Published - 2000 Jan 1|
|Event||2000 Symposium on VLSI Technology - Honolulu, HI, USA|
Duration: 2000 Jun 13 → 2000 Jun 15
ASJC Scopus subject areas
- Electrical and Electronic Engineering