Advantage of radical oxidation for improving reliability of ultra-thin gate oxide

Yuji Saito, Katsuyuki Sekine, Naoki Ueda, Masaki Hirayama, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Contribution to journalConference articlepeer-review

40 Citations (Scopus)


This paper focuses attention on advantage of oxygen radical oxidation by microwave-excited high-density Kr/O2 plasma for improving disadvantages of conventional thermal oxidation process using H2O and/or O2 molecule, and demonstrates that Kr/O2 plasma oxidation process can improve thickness variation on shallow-trench isolation and integrity of silicon oxide not only on (100) surface but also on (111) surface compared to those of conventional thermal oxidation process.

Original languageEnglish
Pages (from-to)176-177
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
Publication statusPublished - 2000
Event2000 Symposium on VLSI Technology - Honolulu, HI, USA
Duration: 2000 Jun 132000 Jun 15

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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