Advantage of la2O3 gate dielectric over HfO 2 for direct contact and mobility improvment

K. Kakushima, K. Tachi, M. Adachi, K. Okamoto, S. Sato, J. Song, T. Kawanago, P. Ahmet, K. Tsutsui, N. Sugii, Takeo Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Citations (Scopus)

Abstract

Advantage of La2O3 over HfO2 MOSFET has been experimentally examined. Silicate reaction especially observed at La 2C3/si interface has been found to suppress the formation of SiO2 layer to realize direct contact, which is useful for further scaling in equivalent oxide thickness (EOT). Due to the lack of interfacial layer, La2O3 has showed relatively high interfacial state density, however, the effective mobility has exceeded to that of HfO2 MOSFET. Mobility analysis has revealed an additional Coulomb scattering at small EOT, suggesting the influence of metal gate. A simple mobility degradation model is pointed out using metal induced defects.

Original languageEnglish
Title of host publicationESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference
PublisherIEEE Computer Society
Pages126-129
Number of pages4
ISBN (Print)9781424423644
DOIs
Publication statusPublished - 2008
EventESSDERC 2008 - 38th European Solid-State Device Research Conference - Edinburgh, Scotland, United Kingdom
Duration: 2008 Sep 152008 Sep 19

Publication series

NameESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference

Other

OtherESSDERC 2008 - 38th European Solid-State Device Research Conference
Country/TerritoryUnited Kingdom
CityEdinburgh, Scotland
Period08/9/1508/9/19

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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