Advantage of further scaling in gate dielectrics below 0.5 nm of equivalent oxide thickness with La2O3 gate dielectrics

K. Kakushima, K. Tachi, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)

Abstract

N-type metal-oxide-semiconductor field-effect transistor (MOSFET) with an equivalent oxide thickness (EOT) of 0.37 nm has been demonstrated with La2O3 as a gate dielectric for the first time. Despite the existence of parasitic capacitances at gate electrode and inversion layer in the channel, a sufficient drain current increment in both linear and saturation regions have been observed, while scaling the gate oxide from 0.48 to 0.37 nm in EOT. Therefore, continuous scaling of EOT below 0.5 nm is still effective for further improvement in device performance.

Original languageEnglish
Pages (from-to)790-793
Number of pages4
JournalMicroelectronics Reliability
Volume50
Issue number6
DOIs
Publication statusPublished - 2010 Jun
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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