Advanced TSV filling method with Sn alloy and its reliability

Young Ki Ko, Myong Suk Kang, Hiroyuki Kokawa, Yutaka S. Sato, Sehoon Yoo, Chang Woo Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

Low cost and high speed molten solder-filling process of through silicon via (TSV) for 3D packaging was investigated. Present filling methods, such as Cu electroplating and chemical vapor deposition (CVD), have some problems like low process speed and complicated process factors. In this study, molten solder was filled into the TSV without voids by using vacuum system. The thickness of wafer was 200 μm and the hole diameters were 20 and 30 μm respectively. TSVs were formed by deep reactive ion etching (DRIE) process. As the wetting layer, Ti and Au was sputtered on the wall of the TSVs. Vacuum pressure was ranged from 0.06 ∼ 0.02MPa. In 0.02MPa condition, via was filled perfectly within only few seconds. To evaluate reliability of the filled TSV, thermal cycle test were carried out. And interface between TSV wall and filled Sn alloy was observed by focused ion beam (FIB).

Original languageEnglish
Title of host publication2011 IEEE International 3D Systems Integration Conference, 3DIC 2011
DOIs
Publication statusPublished - 2011
Event2011 IEEE International 3D Systems Integration Conference, 3DIC 2011 - Osaka, Japan
Duration: 2012 Jan 312012 Feb 2

Publication series

Name2011 IEEE International 3D Systems Integration Conference, 3DIC 2011

Other

Other2011 IEEE International 3D Systems Integration Conference, 3DIC 2011
Country/TerritoryJapan
CityOsaka
Period12/1/3112/2/2

ASJC Scopus subject areas

  • Control and Systems Engineering

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