Advanced TSV filling method with Sn alloy and its reliability

Young Ki Ko; Myong Suk Kang; Hiroyuki Kokawa; Yutaka S. Sato; Sehoon Yoo; Chang Woo Lee

doi:10.1109/3DIC.2012.6262988

Advanced TSV filling method with Sn alloy and its reliability

Young Ki Ko, Myong Suk Kang, Hiroyuki Kokawa, Yutaka S. Sato, Sehoon Yoo, Chang Woo Lee

ENG - Materials Processing

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

Low cost and high speed molten solder-filling process of through silicon via (TSV) for 3D packaging was investigated. Present filling methods, such as Cu electroplating and chemical vapor deposition (CVD), have some problems like low process speed and complicated process factors. In this study, molten solder was filled into the TSV without voids by using vacuum system. The thickness of wafer was 200 μm and the hole diameters were 20 and 30 μm respectively. TSVs were formed by deep reactive ion etching (DRIE) process. As the wetting layer, Ti and Au was sputtered on the wall of the TSVs. Vacuum pressure was ranged from 0.06 ∼ 0.02MPa. In 0.02MPa condition, via was filled perfectly within only few seconds. To evaluate reliability of the filled TSV, thermal cycle test were carried out. And interface between TSV wall and filled Sn alloy was observed by focused ion beam (FIB).

Original language	English
Title of host publication	2011 IEEE International 3D Systems Integration Conference, 3DIC 2011
DOIs	https://doi.org/10.1109/3DIC.2012.6262988
Publication status	Published - 2011 Dec 1
Event	2011 IEEE International 3D Systems Integration Conference, 3DIC 2011 - Osaka, Japan Duration: 2012 Jan 31 → 2012 Feb 2

Publication series

Name	2011 IEEE International 3D Systems Integration Conference, 3DIC 2011

Other

Other	2011 IEEE International 3D Systems Integration Conference, 3DIC 2011
Country	Japan
City	Osaka
Period	12/1/31 → 12/2/2

ASJC Scopus subject areas

Control and Systems Engineering

Access to Document

10.1109/3DIC.2012.6262988

Fingerprint Dive into the research topics of 'Advanced TSV filling method with Sn alloy and its reliability'. Together they form a unique fingerprint.

Cite this

Advanced TSV filling method with Sn alloy and its reliability. / Ko, Young Ki; Kang, Myong Suk; Kokawa, Hiroyuki; Sato, Yutaka S.; Yoo, Sehoon; Lee, Chang Woo.

2011 IEEE International 3D Systems Integration Conference, 3DIC 2011. 2011. 6262988 (2011 IEEE International 3D Systems Integration Conference, 3DIC 2011).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ko, YK, Kang, MS, Kokawa, H, Sato, YS, Yoo, S & Lee, CW 2011, Advanced TSV filling method with Sn alloy and its reliability. in 2011 IEEE International 3D Systems Integration Conference, 3DIC 2011., 6262988, 2011 IEEE International 3D Systems Integration Conference, 3DIC 2011, 2011 IEEE International 3D Systems Integration Conference, 3DIC 2011, Osaka, Japan, 12/1/31. https://doi.org/10.1109/3DIC.2012.6262988

@inproceedings{a6eb3058db744093aff25a3322d6c232,

title = "Advanced TSV filling method with Sn alloy and its reliability",

abstract = "Low cost and high speed molten solder-filling process of through silicon via (TSV) for 3D packaging was investigated. Present filling methods, such as Cu electroplating and chemical vapor deposition (CVD), have some problems like low process speed and complicated process factors. In this study, molten solder was filled into the TSV without voids by using vacuum system. The thickness of wafer was 200 μm and the hole diameters were 20 and 30 μm respectively. TSVs were formed by deep reactive ion etching (DRIE) process. As the wetting layer, Ti and Au was sputtered on the wall of the TSVs. Vacuum pressure was ranged from 0.06 ∼ 0.02MPa. In 0.02MPa condition, via was filled perfectly within only few seconds. To evaluate reliability of the filled TSV, thermal cycle test were carried out. And interface between TSV wall and filled Sn alloy was observed by focused ion beam (FIB).",

author = "Ko, {Young Ki} and Kang, {Myong Suk} and Hiroyuki Kokawa and Sato, {Yutaka S.} and Sehoon Yoo and Lee, {Chang Woo}",

year = "2011",

month = dec,

day = "1",

doi = "10.1109/3DIC.2012.6262988",

language = "English",

isbn = "9781467321891",

series = "2011 IEEE International 3D Systems Integration Conference, 3DIC 2011",

booktitle = "2011 IEEE International 3D Systems Integration Conference, 3DIC 2011",

note = "2011 IEEE International 3D Systems Integration Conference, 3DIC 2011 ; Conference date: 31-01-2012 Through 02-02-2012",

}

TY - GEN

T1 - Advanced TSV filling method with Sn alloy and its reliability

AU - Ko, Young Ki

AU - Kang, Myong Suk

AU - Kokawa, Hiroyuki

AU - Sato, Yutaka S.

AU - Yoo, Sehoon

AU - Lee, Chang Woo

PY - 2011/12/1

Y1 - 2011/12/1

N2 - Low cost and high speed molten solder-filling process of through silicon via (TSV) for 3D packaging was investigated. Present filling methods, such as Cu electroplating and chemical vapor deposition (CVD), have some problems like low process speed and complicated process factors. In this study, molten solder was filled into the TSV without voids by using vacuum system. The thickness of wafer was 200 μm and the hole diameters were 20 and 30 μm respectively. TSVs were formed by deep reactive ion etching (DRIE) process. As the wetting layer, Ti and Au was sputtered on the wall of the TSVs. Vacuum pressure was ranged from 0.06 ∼ 0.02MPa. In 0.02MPa condition, via was filled perfectly within only few seconds. To evaluate reliability of the filled TSV, thermal cycle test were carried out. And interface between TSV wall and filled Sn alloy was observed by focused ion beam (FIB).

AB - Low cost and high speed molten solder-filling process of through silicon via (TSV) for 3D packaging was investigated. Present filling methods, such as Cu electroplating and chemical vapor deposition (CVD), have some problems like low process speed and complicated process factors. In this study, molten solder was filled into the TSV without voids by using vacuum system. The thickness of wafer was 200 μm and the hole diameters were 20 and 30 μm respectively. TSVs were formed by deep reactive ion etching (DRIE) process. As the wetting layer, Ti and Au was sputtered on the wall of the TSVs. Vacuum pressure was ranged from 0.06 ∼ 0.02MPa. In 0.02MPa condition, via was filled perfectly within only few seconds. To evaluate reliability of the filled TSV, thermal cycle test were carried out. And interface between TSV wall and filled Sn alloy was observed by focused ion beam (FIB).

UR - http://www.scopus.com/inward/record.url?scp=84866862197&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84866862197&partnerID=8YFLogxK

U2 - 10.1109/3DIC.2012.6262988

DO - 10.1109/3DIC.2012.6262988

M3 - Conference contribution

AN - SCOPUS:84866862197

SN - 9781467321891

T3 - 2011 IEEE International 3D Systems Integration Conference, 3DIC 2011

BT - 2011 IEEE International 3D Systems Integration Conference, 3DIC 2011

T2 - 2011 IEEE International 3D Systems Integration Conference, 3DIC 2011

Y2 - 31 January 2012 through 2 February 2012

ER -