Advanced solder TSV filling technology developed with vacuum and wave soldering

Young Ki Ko, Hiromichi T. Fujii, Yutaka S. Sato, Chang Woo Lee, Sehoon Yoo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

This research investigated advanced filling technology, different from existing technologies, for the purpose of 3D layering on electronic circuits. Filling with molten solder causes a pressure difference between the upper and lower part of the wafer, to overcome surface tension of the through via holes, and then due to pressure difference molten solder is filled into the TSV. The wafer thickness was 100-200m with holes of diameter 2030m. The TSVs were formed by deep reactive ion etching (DRIE). A wetting layer of Ti/Cu or Au was sputtered on the wall of the TSVs. Due to pressure differences between upper and lower parts, the molten solder filled into the Through Silicon Via (TSV). Vacuum Pressure was between 0.02MPa and 0.08MPa. The filling speed was under 3 seconds, much higher than conventional methods. Cross-sectional micrographs were taken with a field emission second electron microscope (FE-SEM).

Original languageEnglish
Title of host publication2011 IEEE 61st Electronic Components and Technology Conference, ECTC 2011
Pages2091-2095
Number of pages5
DOIs
Publication statusPublished - 2011 Jul 21
Event2011 61st Electronic Components and Technology Conference, ECTC 2011 - Lake Buena Vista, FL, United States
Duration: 2011 May 312011 Jun 3

Publication series

NameProceedings - Electronic Components and Technology Conference
ISSN (Print)0569-5503

Other

Other2011 61st Electronic Components and Technology Conference, ECTC 2011
CountryUnited States
CityLake Buena Vista, FL
Period11/5/3111/6/3

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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