Advanced method for measuring ultra-low contact resistivity between silicide and silicon based on cross bridge kelvin resistor

T. Isogai, Hiroaki Tanaka, A. Teramoto, T. Goto, S. Sugawa, T. Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

16 Citations (Scopus)

Abstract

In order to evaluate low contact resistivity precisely, we have developed a new test structure based on cross bridge Kelvin resistor. In this structure, the misalignment margin can be as small as possible. Furthermore, we had successively derived the theoretical expressions to ensure the validity of the newly developed method. This method will enable us to evaluate the silicide to silicon contact resistivity in the sub-10-8 cm2 region.

Original languageEnglish
Title of host publicationICMTS 2009 - 2009 IEEE International Conference on Microelectronic Test Structures
Pages109-113
Number of pages5
DOIs
Publication statusPublished - 2009 Jul 15
Event2009 IEEE International Conference on Microelectronic Test Structures, ICMTS 2009 - Oxnard, CA, United States
Duration: 2009 Mar 302009 Apr 2

Publication series

NameIEEE International Conference on Microelectronic Test Structures

Other

Other2009 IEEE International Conference on Microelectronic Test Structures, ICMTS 2009
CountryUnited States
CityOxnard, CA
Period09/3/3009/4/2

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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