Advanced metal gate FinFET CMOS technology

Y. X. Liu, T. Matsukawa, K. Endo, M. Masahara, S. O'uchi, K. Ishii, K. Sakamoto, E. Suzuki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have developed the advanced metal gate technologies for materializing FinFET CMOS circuits. Using the developed titanium nitride (TiN) gate technologies, we demonstrate the fin-height controlled FinFET CMOS with accurate current matching and the flexible threshold voltage (Vth) asymmetric gate insulator thickness four-terminal (4T) FinFETs with a greatly improved subthreshold slope (S-slope). Furthermore, the newly developed nitrogen gas flow ratio, Rn = N2/(Ar + N2), controlled PVD TiN gate and the tantalum (Ta)/molybdenum (Mo) interdiffusion gate technologies to set the symmetrical and lower Vth's for FinFET CMOS are presented.

Original languageEnglish
Title of host publicationECS Transactions - Dielectrics for Nanosystems 3
Subtitle of host publicationMaterials Science, Processing, Reliability, and Manufacturing
Pages239-252
Number of pages14
Edition2
DOIs
Publication statusPublished - 2008 Nov 17
Externally publishedYes
Event3rd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 213th ECS Meeting - Phoenix, AZ, United States
Duration: 2008 May 182008 May 22

Publication series

NameECS Transactions
Number2
Volume13
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other3rd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 213th ECS Meeting
CountryUnited States
CityPhoenix, AZ
Period08/5/1808/5/22

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Liu, Y. X., Matsukawa, T., Endo, K., Masahara, M., O'uchi, S., Ishii, K., Sakamoto, K., & Suzuki, E. (2008). Advanced metal gate FinFET CMOS technology. In ECS Transactions - Dielectrics for Nanosystems 3: Materials Science, Processing, Reliability, and Manufacturing (2 ed., pp. 239-252). (ECS Transactions; Vol. 13, No. 2). https://doi.org/10.1149/1.2908637