Advanced germanium epitaxy for photonics application

Y. Yamamoto, S. Lischke, L. Zimmermann, D. Knoll, J. Murota, B. Tillack

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Investigations of low threading dislocation density (TDD) Ge growth using reduced pressure chemical vapor deposition for photonics application are reviewed. By interrupting the Ge growth process and annealing for several times during Ge epitaxy (cyclic annealing), TDD of below 1×10<sup>6</sup> cm<sup>-2</sup> is achieved for 4.7 μn thick Ge. Root mean square of roughness below 0.5 nm is realized. Thin and low TDD Ge layer fabrication is demonstrated by depositing thick Ge with cyclic annealing process followed by HCl etching. Dislocation4 free area of local Ge on insulator is formed between [110] and [1-10] direction by lateral selective Ge growth in cavity between SiO<inf>2</inf> cap and buried oxide, which is formed by sacrificial Si etching. Using an atomic-layer-doping approach, self-limitation of incorporated P dose at ∼1/4 monolayer is obtained offering heavy n-doping in Ge. P diffusion suppression by delta-doped Si in Ge is observed. By Ge growth followed by HCl etching process, photodiode with one order of magnitude lower dark current compared to standard Ge growth with cyclic annealing is fabricated.

Original languageEnglish
Title of host publicationECS Transactions
PublisherElectrochemical Society Inc.
Pages123-134
Number of pages12
Volume67
Edition1
ISBN (Print)9781607685395
DOIs
Publication statusPublished - 2015
Event2015 5th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2015 - Lake Tahoe, United States
Duration: 2015 Jun 142015 Jun 18

Other

Other2015 5th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2015
CountryUnited States
CityLake Tahoe
Period15/6/1415/6/18

ASJC Scopus subject areas

  • Engineering(all)

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