TY - GEN
T1 - Advanced germanium epitaxy for photonics application
AU - Yamamoto, Y.
AU - Lischke, S.
AU - Zimmermann, L.
AU - Knoll, D.
AU - Murota, J.
AU - Tillack, B.
N1 - Publisher Copyright:
© The Electrochemical Society.
PY - 2015
Y1 - 2015
N2 - Investigations of low threading dislocation density (TDD) Ge growth using reduced pressure chemical vapor deposition for photonics application are reviewed. By interrupting the Ge growth process and annealing for several times during Ge epitaxy (cyclic annealing), TDD of below 1×106 cm-2 is achieved for 4.7 μn thick Ge. Root mean square of roughness below 0.5 nm is realized. Thin and low TDD Ge layer fabrication is demonstrated by depositing thick Ge with cyclic annealing process followed by HCl etching. Dislocation4 free area of local Ge on insulator is formed between [110] and [1-10] direction by lateral selective Ge growth in cavity between SiO2 cap and buried oxide, which is formed by sacrificial Si etching. Using an atomic-layer-doping approach, self-limitation of incorporated P dose at ∼1/4 monolayer is obtained offering heavy n-doping in Ge. P diffusion suppression by delta-doped Si in Ge is observed. By Ge growth followed by HCl etching process, photodiode with one order of magnitude lower dark current compared to standard Ge growth with cyclic annealing is fabricated.
AB - Investigations of low threading dislocation density (TDD) Ge growth using reduced pressure chemical vapor deposition for photonics application are reviewed. By interrupting the Ge growth process and annealing for several times during Ge epitaxy (cyclic annealing), TDD of below 1×106 cm-2 is achieved for 4.7 μn thick Ge. Root mean square of roughness below 0.5 nm is realized. Thin and low TDD Ge layer fabrication is demonstrated by depositing thick Ge with cyclic annealing process followed by HCl etching. Dislocation4 free area of local Ge on insulator is formed between [110] and [1-10] direction by lateral selective Ge growth in cavity between SiO2 cap and buried oxide, which is formed by sacrificial Si etching. Using an atomic-layer-doping approach, self-limitation of incorporated P dose at ∼1/4 monolayer is obtained offering heavy n-doping in Ge. P diffusion suppression by delta-doped Si in Ge is observed. By Ge growth followed by HCl etching process, photodiode with one order of magnitude lower dark current compared to standard Ge growth with cyclic annealing is fabricated.
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U2 - 10.1149/06701.0123ecst
DO - 10.1149/06701.0123ecst
M3 - Conference contribution
AN - SCOPUS:84931367533
T3 - ECS Transactions
SP - 123
EP - 134
BT - 2015 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2015
A2 - Kuo, Y.
PB - Electrochemical Society Inc.
T2 - 2015 5th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2015
Y2 - 14 June 2015 through 18 June 2015
ER -