Advanced FinFET technology: TiN metal-gate CMOS and 3T/4T device integration

Y. X. Liu, K. Endo, M. Masahara, E. Sugimata, T. Matsukawa, K. Ishii, H. Yamauchi, T. Shimizu, K. Sakamoto, S. O'uchi, T. Sekigawa, E. Suzuki

Research output: Contribution to journalConference articlepeer-review

9 Citations (Scopus)
Original languageEnglish
Article number1563594
Pages (from-to)219-220
Number of pages2
JournalProceedings - IEEE International SOI Conference
Volume2005
DOIs
Publication statusPublished - 2005 Dec 1
Externally publishedYes
Event2005 IEEE International SOI Conference - Honolulu, HI, United States
Duration: 2005 Oct 32005 Oct 6

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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