Advanced FinFET technologies for boosting SRAM performance

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Now, double-Gate device technology is widely used for enhancement of device characteristics of the scaled MOSFETs. Moreover, independent-double-gate devices have been proposed to enable Vth adjustment. It is revealed that SRAM performance have been increased by introducing the independent-double-gate FinFET.

Original languageEnglish
Title of host publicationProceedings - 2017 IEEE 12th International Conference on ASIC, ASICON 2017
EditorsYajie Qin, Zhiliang Hong, Ting-Ao Tang
PublisherIEEE Computer Society
Pages1141-1144
Number of pages4
ISBN (Electronic)9781509066247
DOIs
Publication statusPublished - 2017 Jul 1
Externally publishedYes
Event12th IEEE International Conference on Advanced Semiconductor Integrated Circuits, ASICON 2017 - Guiyang, China
Duration: 2017 Oct 252017 Oct 28

Publication series

NameProceedings of International Conference on ASIC
Volume2017-October
ISSN (Print)2162-7541
ISSN (Electronic)2162-755X

Other

Other12th IEEE International Conference on Advanced Semiconductor Integrated Circuits, ASICON 2017
CountryChina
CityGuiyang
Period17/10/2517/10/28

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Advanced FinFET technologies for boosting SRAM performance'. Together they form a unique fingerprint.

Cite this