Advanced FinFET technologies: Extension doping, Vth controllable CMOS inverters and SRAM

Y. X. Liu, K. Endo, S. O'uchi, T. Matsukawa, K. Sakamoto, M. Masahara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The advanced FinFET technologies including extension doping, threshold voltage controllable CMOS inverters and the β-ratio optimized SRAMs are presented. It is experimentally found that the best extension ion implantation conditions are dose of 4×1014 cm-2 and tilted angle of 60°. With further increasing dose, the device performance deteriorates owing to the incomplete recrystallization of amorphous regions in the thin extensions. The logic gate threshold voltage controllable single metal gate FinFET CMOS inverter constructed by a tied-gate 3-terminal (3T) PMOS and an independent double-gate 4-terminal (4T) NMOS is proposed and demonstrated. Furthermore, the FinFET SRAMs with different β-ratios were fabricated and evaluated. The higher β-ratio provides the large static noise margin at read condition due to the high current drivability of pull-down transistor.

Original languageEnglish
Title of host publicationDielectrics for Nanosystems 4
Subtitle of host publicationMaterials Science, Processing, Reliability, and Manufacturing
Pages385-401
Number of pages17
Edition2
DOIs
Publication statusPublished - 2010 Dec 30
Externally publishedYes
Event4th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 217th ECS Meeting - Vancouver, BC, Canada
Duration: 2010 Apr 262010 Apr 28

Publication series

NameECS Transactions
Number2
Volume28
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other4th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 217th ECS Meeting
CountryCanada
CityVancouver, BC
Period10/4/2610/4/28

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'Advanced FinFET technologies: Extension doping, V<sub>th</sub> controllable CMOS inverters and SRAM'. Together they form a unique fingerprint.

Cite this