Advanced FinFET technologies: Extension doping, Vth controllable CMOS inverters and SRAM

Y. X. Liu, K. Endo, S. O'uchi, T. Matsukawa, K. Sakamoto, M. Masahara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The advanced FinFET technologies including extension doping, threshold voltage controllable CMOS inverters and the β-ratio optimized SRAMs are presented. It is experimentally found that the best extension ion implantation conditions are dose of 4×1014 cm-2 and tilted angle of 60°. With further increasing dose, the device performance deteriorates owing to the incomplete recrystallization of amorphous regions in the thin extensions. The logic gate threshold voltage controllable single metal gate FinFET CMOS inverter constructed by a tied-gate 3-terminal (3T) PMOS and an independent double-gate 4-terminal (4T) NMOS is proposed and demonstrated. Furthermore, the FinFET SRAMs with different β-ratios were fabricated and evaluated. The higher β-ratio provides the large static noise margin at read condition due to the high current drivability of pull-down transistor.

Original languageEnglish
Title of host publicationDielectrics for Nanosystems 4
Subtitle of host publicationMaterials Science, Processing, Reliability, and Manufacturing
PublisherElectrochemical Society Inc.
Pages385-401
Number of pages17
Edition2
ISBN (Electronic)9781607681427
ISBN (Print)9781566777926
DOIs
Publication statusPublished - 2010
Externally publishedYes

Publication series

NameECS Transactions
Number2
Volume28
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

ASJC Scopus subject areas

  • Engineering(all)

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