Advanced direct-polishing process development of non-porous ultralow-k dielectric fluorocarbon with plasma treatment on Cu interconnects

Xun Gu, Takenao Nemoto, Yugo Tomita, Akinobu Teramoto, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

A direct-polishing process was applied to the ultralow-k dielectric without a dielectric protective layer to reduce the effective dielectric constant in damascene interconnects. The direct-polishing process on organic non-porous ultralow-k dielectric, fluorocarbon (k = 2.2), was demonstrated and an optimum direct-polishing process condition was investigated. Mechanically enhanced chemical reaction on the fluorocarbon degraded the electrical properties by changing the structure of the fluorocarbon. Higher down-pressure, one of the most important factors in mechanical effects, resulted in both higher leakage current and a variance of the structure of th fluorocarbon. A surface nitrogen plasma treatment of fluorocarbon before polishing to form an effective protective layer was applied to avoid the degradation of electrical characteristics during the direct-polish, and this result revealed that the surface nitrogen plasma treatment of fluorocarbon is a practical technique for a direct-polishing process in advanced Cu interconnects.

Original languageEnglish
Pages (from-to)H407-H411
JournalJournal of the Electrochemical Society
Volume159
Issue number4
DOIs
Publication statusPublished - 2012 Feb 29

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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