Advanced direct-polish process on organic non-porous ultra low-k fluorocarbon dielectric on Cu interconnects

Xun Gu, Takenao Nemoto, Yugo Tomita, Ricardo Duyos Mateo, Akinobu Teramoto, Shin Ichiro Kuroki, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

A direct-polish process has applied to the ultra low-k dielectric without the etch stop layer to reduce effective dielectric constant in damascene interconnects. In this study, the direct-polish process on organic non-porous dielectric, fluorocarbon (k=2.2), was demonstrated and an optimum direct-polish process condition was investigated. Mechanical effect, not chemical effect, on fluorocarbon degraded electrical properties by changing of chemical structure of fluorocarbon. A surface plasma treatment of fluorocarbon before polishing was applied to avoid the degradation of electrical characteristics during direct-polish and this result revealed that the surface plasma treatment of fluorocarbon is a practical technique in advanced Cu interconnects.

Original languageEnglish
Title of host publicationChina Semiconductor Technology International Conference 2011, CSTIC 2011
Pages653-658
Number of pages6
Edition1
DOIs
Publication statusPublished - 2011 Jul 1
Event10th China Semiconductor Technology International Conference 2011, CSTIC 2011 - Shanghai, China
Duration: 2011 Mar 132011 Mar 14

Publication series

NameECS Transactions
Number1
Volume34
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other10th China Semiconductor Technology International Conference 2011, CSTIC 2011
Country/TerritoryChina
CityShanghai
Period11/3/1311/3/14

ASJC Scopus subject areas

  • Engineering(all)

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