Advanced DG-MOSFETs process technologies

E. Suzuki, Y. X. Liu, K. Endo, T. Matsukawa, M. Masahara, K. Sakamoto, S. O'uchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Double-gate (DG-) MOSFETs (DGFETs) have received much attention as promising silicon devices for future VLSI circuits thanks to their high short charnel effects immunity. The innovative independent-double-gate four-terminal MOSFET (4T-DGFET) enables a new function of the threshold voltage controllability for the optimal power management. In this article, we present the recent progress in the fabrication processes of the fin-type DGFETs (FinFETs) and the 4T-FinFET with the separated double gates.

Original languageEnglish
Title of host publicationECS Transactions - 5th International Symposium on ULSI Process Integration
Pages339-348
Number of pages10
Edition6
DOIs
Publication statusPublished - 2007 Dec 1
Externally publishedYes
Event5th International Symposium on ULSI Process Integration - 212th ECS Meeting - Washington, DC, United States
Duration: 2007 Oct 72007 Oct 12

Publication series

NameECS Transactions
Number6
Volume11
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other5th International Symposium on ULSI Process Integration - 212th ECS Meeting
CountryUnited States
CityWashington, DC
Period07/10/707/10/12

ASJC Scopus subject areas

  • Engineering(all)

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