TY - GEN
T1 - Advanced 18 nm Quad-MTJ technology overcomes dilemma of Retention and Endurance under Scaling beyond 2X nm
AU - Naganuma, H.
AU - Miura, S.
AU - Honjo, H.
AU - Nishioka, K.
AU - Watanabe, T.
AU - Nasuno, T.
AU - Inoue, H.
AU - Nguyen, T. V.A.
AU - Endo, Y.
AU - Noguchi, Y.
AU - Yasuhira, M.
AU - Ikeda, S.
AU - Endoh, T.
N1 - Funding Information:
The advanced 18 nm Quad-MTJ (low αeff material with high PMA of free layer, low RA MgO layers, stable reference) employed by novel low-damage 300 mm fabrication process overcomes dilemma of retention and endurance under scaling beyond 2X nm (Fig.11). This technology will contribute to 1X nm STT-MRAM available for wide application from SRAM/eDRAM to eFlash, etc. References [1] K. Watanabe et al., Nat. Com., 9, 663 (2018). [2] N. Perrissin, et al, Nanoscale 10, 12187 (2018). [3] S. Ikeda et al., Nat. Mater. 9, 721 (2010). [4] T. Saito et al., IEEE Trans. Magn. 54, 3400505 (2018). [5] K. Nishioka, et al., VLSI (2019). [6] S. Miura et al, IEEE T-ED 67, 5368 (2020). Acknowledgements This work was supported by CIES’s Industrial Affiliation on STT MRAM program and JST-OPERA.
Publisher Copyright:
© 2021 JSAP
PY - 2021
Y1 - 2021
N2 - Advanced quad-interfaces perpendicular magnetic tunnel junction (Quad-MTJ) was developed by engineering a low effective damping constant (αeff) material in free layer with high perpendicular magnetic anisotropy (PMA), and low resistance area product (RA) in MgO layers, and stable reference layer. The advanced 18 nm Quad-MTJ fabricated by the developed low-damage 300 mm fabrication process exhibited following performances over those of Double-MTJ; (a) 1.77 times larger thermal stability factor (Δ), (b) 0.83 times smaller writing current (Ic) at 10 ns, (c) 2.1 times higher write efficiency (Δ/Ic) at 10 ns. Thanks to the above excellent MTJ stack design, it is the first time beyond 2X nm generation that the advanced 18 nm Quad-MTJ achieves at least 6×1011 endurance with 10 years retention. Consequently, the advanced Quad-MTJ technologies have broken out the dilemma issue of retention and endurance even under scaling of 2X nm.
AB - Advanced quad-interfaces perpendicular magnetic tunnel junction (Quad-MTJ) was developed by engineering a low effective damping constant (αeff) material in free layer with high perpendicular magnetic anisotropy (PMA), and low resistance area product (RA) in MgO layers, and stable reference layer. The advanced 18 nm Quad-MTJ fabricated by the developed low-damage 300 mm fabrication process exhibited following performances over those of Double-MTJ; (a) 1.77 times larger thermal stability factor (Δ), (b) 0.83 times smaller writing current (Ic) at 10 ns, (c) 2.1 times higher write efficiency (Δ/Ic) at 10 ns. Thanks to the above excellent MTJ stack design, it is the first time beyond 2X nm generation that the advanced 18 nm Quad-MTJ achieves at least 6×1011 endurance with 10 years retention. Consequently, the advanced Quad-MTJ technologies have broken out the dilemma issue of retention and endurance even under scaling of 2X nm.
KW - 1X nm
KW - P-MTJ
KW - Quad interface
KW - STT-MRAM
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M3 - Conference contribution
AN - SCOPUS:85125495397
T3 - Digest of Technical Papers - Symposium on VLSI Technology
BT - 2021 Symposium on VLSI Technology, VLSI Technology 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 41st Symposium on VLSI Technology, VLSI Technology 2021
Y2 - 13 June 2021 through 19 June 2021
ER -