Adsorption processes of Se on the GaAs(111)A-(2×2) surface

Akihiro Ohtake; Takuji Komura; Takashi Hanada; Shiro Miwa; Tetsuji Yasuda; Takafumi Yao

doi:10.1016/S0169-4332(00)00226-9

Adsorption processes of Se on the GaAs(111)A-(2×2) surface

Akihiro Ohtake, Takuji Komura, Takashi Hanada, Shiro Miwa, Tetsuji Yasuda, Takafumi Yao

Materials Design Division

Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

Abstract

The adsorption processes of Se on the GaAs(111)A surface have been systematically studied using reflection high-energy electron diffraction (RHEED), scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), and total-reflection-angle X-ray spectroscopy (TRAXS). We have found that a reconstructed structure of (2√3×2√3)-R30° is formed on the Se-adsorbed GaAs(111)A. A structure model has been proposed for the GaAs(111)A-(2√3×2√3)-R30°-Se surface, which consists of two Se trimers located at a hollow site of the GaAs(111)A surface and three Ga vacancies per unit cell. The proposed structure model sufficiently explains experimental data from RHEED, XPS, and STM, and satisfies electron counting requirements.

Original language	English
Pages (from-to)	419-424
Number of pages	6
Journal	Applied Surface Science
Volume	162
DOIs	https://doi.org/10.1016/S0169-4332(00)00226-9
Publication status	Published - 2000 Aug 1
Event	5th International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-5) - Provence, France Duration: 1999 Jul 6 → 1999 Jul 9

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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title = "Adsorption processes of Se on the GaAs(111)A-(2×2) surface",

abstract = "The adsorption processes of Se on the GaAs(111)A surface have been systematically studied using reflection high-energy electron diffraction (RHEED), scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), and total-reflection-angle X-ray spectroscopy (TRAXS). We have found that a reconstructed structure of (2√3×2√3)-R30° is formed on the Se-adsorbed GaAs(111)A. A structure model has been proposed for the GaAs(111)A-(2√3×2√3)-R30°-Se surface, which consists of two Se trimers located at a hollow site of the GaAs(111)A surface and three Ga vacancies per unit cell. The proposed structure model sufficiently explains experimental data from RHEED, XPS, and STM, and satisfies electron counting requirements.",

author = "Akihiro Ohtake and Takuji Komura and Takashi Hanada and Shiro Miwa and Tetsuji Yasuda and Takafumi Yao",

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TY - JOUR

T1 - Adsorption processes of Se on the GaAs(111)A-(2×2) surface

AU - Ohtake, Akihiro

AU - Komura, Takuji

AU - Hanada, Takashi

AU - Miwa, Shiro

AU - Yasuda, Tetsuji

AU - Yao, Takafumi

PY - 2000/8/1

Y1 - 2000/8/1

N2 - The adsorption processes of Se on the GaAs(111)A surface have been systematically studied using reflection high-energy electron diffraction (RHEED), scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), and total-reflection-angle X-ray spectroscopy (TRAXS). We have found that a reconstructed structure of (2√3×2√3)-R30° is formed on the Se-adsorbed GaAs(111)A. A structure model has been proposed for the GaAs(111)A-(2√3×2√3)-R30°-Se surface, which consists of two Se trimers located at a hollow site of the GaAs(111)A surface and three Ga vacancies per unit cell. The proposed structure model sufficiently explains experimental data from RHEED, XPS, and STM, and satisfies electron counting requirements.

AB - The adsorption processes of Se on the GaAs(111)A surface have been systematically studied using reflection high-energy electron diffraction (RHEED), scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), and total-reflection-angle X-ray spectroscopy (TRAXS). We have found that a reconstructed structure of (2√3×2√3)-R30° is formed on the Se-adsorbed GaAs(111)A. A structure model has been proposed for the GaAs(111)A-(2√3×2√3)-R30°-Se surface, which consists of two Se trimers located at a hollow site of the GaAs(111)A surface and three Ga vacancies per unit cell. The proposed structure model sufficiently explains experimental data from RHEED, XPS, and STM, and satisfies electron counting requirements.

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VL - 162

SP - 419

EP - 424

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

T2 - 5th International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-5)

Y2 - 6 July 1999 through 9 July 1999

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