Adsorption processes of Se on the GaAs(111)A-(2×2) surface

Akihiro Ohtake, Takuji Komura, Takashi Hanada, Shiro Miwa, Tetsuji Yasuda, Takafumi Yao

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)


The adsorption processes of Se on the GaAs(111)A surface have been systematically studied using reflection high-energy electron diffraction (RHEED), scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), and total-reflection-angle X-ray spectroscopy (TRAXS). We have found that a reconstructed structure of (2√3×2√3)-R30° is formed on the Se-adsorbed GaAs(111)A. A structure model has been proposed for the GaAs(111)A-(2√3×2√3)-R30°-Se surface, which consists of two Se trimers located at a hollow site of the GaAs(111)A surface and three Ga vacancies per unit cell. The proposed structure model sufficiently explains experimental data from RHEED, XPS, and STM, and satisfies electron counting requirements.

Original languageEnglish
Pages (from-to)419-424
Number of pages6
JournalApplied Surface Science
Publication statusPublished - 2000 Aug 1
Event5th International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-5) - Provence, France
Duration: 1999 Jul 61999 Jul 9

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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