Adsorption of Zn on the GaAs(001)-(2×4) surface

Akihiro Ohtake, Takashi Hanada, Tetsuji Yasuda, Takafumi Yao

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

Adsorption of Zn on the GaAs(001)-(2×4) surface has been studied by reflection high-energy electron diffraction (RHEED) and total-reflection-angle x-ray spectroscopy in real time. Adsorption sites of Zn atoms on the (2×4) surface have been determined using rocking-curve analysis of RHEED. The exposure of the (2×4) surface to a Zn beam results in the preferred adsorption of Zn at Ga-vacancy sites in the missing dimer trenches of the (2×4) unit cell. The amount of adsorbed Zn atoms under a Zn flux has been estimated to be ∼0.50 and ∼0.20 monolayers at 200 and 250°C, respectively.

Original languageEnglish
Pages (from-to)2975-2977
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number20
DOIs
Publication statusPublished - 1999 May 17

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Adsorption of Zn on the GaAs(001)-(2×4) surface'. Together they form a unique fingerprint.

Cite this