Abstract
Adsorption of Te and coadsorption of Te and Hg on Si(110) and Ge(110) surfaces have been studied using ion-neutralization spectroscopy (INS) and ultraviolet photoemission spectroscopy (UPS) at h nu equals 16. 8 and 21. 2 eV. Monolayer and multilayer adsorption of Te on Si and Ge enable us to differentiate interfacial from bulk electronic structures. Informative differences are observed between the UPS and INS spectra. HgTe has also been produced on these surfaces.
| Original language | English |
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| Title of host publication | Unknown Host Publication Title |
| Publisher | Int Union for Vac Sci, Tech and Appl |
| Pages | 1187-1190 |
| Number of pages | 4 |
| Volume | 2 |
| Publication status | Published - 1977 |
| Event | Proc of the Int Vac Congr, 7th, and the Int Conf on Solid Surf, 3rd, of the Int Union for Vac Sci, Tech and Appl - Vienna, Austria Duration: 1977 Sep 12 → 1977 Sep 16 |
Other
| Other | Proc of the Int Vac Congr, 7th, and the Int Conf on Solid Surf, 3rd, of the Int Union for Vac Sci, Tech and Appl |
|---|---|
| City | Vienna, Austria |
| Period | 77/9/12 → 77/9/16 |
ASJC Scopus subject areas
- Engineering(all)
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Cite this
Hagstrum, H. D., & Sakurai, T. (1977). ADSORPTION OF Te and Hg ON Si(110) AND Ge(110) SURFACES. In Unknown Host Publication Title (Vol. 2, pp. 1187-1190). Int Union for Vac Sci, Tech and Appl.