ADSORPTION OF Te and Hg ON Si(110) AND Ge(110) SURFACES.

H. D. Hagstrum, T. Sakurai

    Research output: Chapter in Book/Report/Conference proceedingChapter

    Abstract

    Adsorption of Te and coadsorption of Te and Hg on Si(110) and Ge(110) surfaces have been studied using ion-neutralization spectroscopy (INS) and ultraviolet photoemission spectroscopy (UPS) at h nu equals 16. 8 and 21. 2 eV. Monolayer and multilayer adsorption of Te on Si and Ge enable us to differentiate interfacial from bulk electronic structures. Informative differences are observed between the UPS and INS spectra. HgTe has also been produced on these surfaces.

    Original languageEnglish
    Title of host publicationUnknown Host Publication Title
    PublisherInt Union for Vac Sci, Tech and Appl
    Pages1187-1190
    Number of pages4
    Volume2
    Publication statusPublished - 1977
    EventProc of the Int Vac Congr, 7th, and the Int Conf on Solid Surf, 3rd, of the Int Union for Vac Sci, Tech and Appl - Vienna, Austria
    Duration: 1977 Sep 121977 Sep 16

    Other

    OtherProc of the Int Vac Congr, 7th, and the Int Conf on Solid Surf, 3rd, of the Int Union for Vac Sci, Tech and Appl
    CityVienna, Austria
    Period77/9/1277/9/16

    ASJC Scopus subject areas

    • Engineering(all)

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  • Cite this

    Hagstrum, H. D., & Sakurai, T. (1977). ADSORPTION OF Te and Hg ON Si(110) AND Ge(110) SURFACES. In Unknown Host Publication Title (Vol. 2, pp. 1187-1190). Int Union for Vac Sci, Tech and Appl.