Adsorption of SiH4 or Si2H6 on P/Si(100) at room temperatures

Y. Tsukidate, M. Suemitsu

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)

Abstract

Effects of predeposition of phosphorus on room temperature adsorption of SiH4 or Si2H6 on Si(100) surfaces have been investigated by H2-temperature-programmed-desorption measurements. As a result, it was clarified that the amount of adsorbed SiH4 or Si2H6 molecules after saturation, as measured from the hydrogen coverage θH(sat), decreases from that on a bare-Si surface, satisfying the relation θH(sat)+θP = 1, with θP the predeposited phosphorus coverage. This relation indicates that neither SiH4 nor Si2H6 chemisorbs at phosphorus sites at room temperatures. For initial adsorptions, by contrast, the adsorption of SiH4 or Si2H6 were less affected, for which migration of physisorbed molecules from P-sites toward bare-Si sites is suggested.

Original languageEnglish
Pages (from-to)282-286
Number of pages5
JournalApplied Surface Science
Volume130-132
DOIs
Publication statusPublished - 1998
EventProceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4 - Tokyo, Jpn
Duration: 1997 Oct 271997 Oct 30

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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