Adsorption of N2H4on silicon surfaces

C. Tindall, L. Li, O. Takaoka, Y. Hasegawa, T. Sakurai

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

The chemistry of N2H4 on Si(100)2×1 and Si(111)7×7 has been studied using scanning tunneling microscopy (STM). On Si(100), the STM images show that the predominant pathway for adsorption is across the silicon dimers with the N-N bond parallel to the surface. On Si(111)7×7, the molecule behaves in a manner which is similar to NH 3. That is, at low coverages the molecule adsorbs preferentially at center adatoms due to the greater reactivity of these sites, while at higher coverages it also reacts with the corner adatoms.

Original languageEnglish
Pages (from-to)1155-1158
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume15
Issue number3
DOIs
Publication statusPublished - 1997
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Fingerprint

Dive into the research topics of 'Adsorption of N<sub>2</sub>H<sub>4</sub>on silicon surfaces'. Together they form a unique fingerprint.

Cite this