Abstract
The geometry and the coverage-dependent growth structures formed by Na deposition on the GaAs(110) surface at room temperature were studied using a field-ion scanning tunneling microscope. When the coverage is low, Na adatoms reside on the bridge site encompassing one Ga and two As surface atoms to form linear chains along the [1;;;;;;;0] direction. The Na-Na nearest-neighbor distance in this low-density chain structure is 8. At slightly increased coverage, the Na chains began to disorder. Some of them were packed closer to form domains showing a local 2 structure. None of high-density two dimensional ordered structures or low-density zigzag chains was observed, in contrast to the Cs/GaAs(110) system. Additional Na adsorption resulted in the formation of three-dimensional disordered clusters. The saturation coverage of Na was determined to be 0.1 ML (1 ML=2 Na per substrate unit cell).
Original language | English |
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Pages (from-to) | L1117-L1120 |
Journal | Japanese journal of applied physics |
Volume | 31 |
Issue number | 8 |
DOIs | |
Publication status | Published - 1992 Aug |
Externally published | Yes |
Keywords
- Alkali metal
- Cesium
- Fi-STM
- Film growth
- Gaas(110)
- Sodium
- Stm
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)