Adsorption of carbon-related species onto GaAs(001), (011), and (111) surfaces exposed to trimethylgallium

S. Goto, H. Ohno, Y. Nomura, Y. Morishita, Y. Katayama

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1 Citation (Scopus)

Abstract

The adsorption/desorption process of carbon-related species on GaAs surfaces exposed to trimethylgallium (TMGa) was studied using in situ Auger electron spectroscopy (AES) and reflection high-energy electron diffraction (RHEED) as a function of the various surface reconstructions and orientations. The adsorption of C originating from TMGa and its transient behavior were observed on Ga-stabilized (001)-4×6 and (111)B-√19×√19 surfaces. On the other hand, the C KLL (273 eV) signal intensity on (011) and (111)A surfaces was extremely low, even just after exposure to TMGa. The growth rates of GaAs grown by chemical beam epitaxy using an alternating supply of TMGa and arsine depended strongly on the substrate orientations, corresponding to the adsorption of the C-containing species on the surfaces. The results indicated that the self-limiting monolayer growth (atomic-layer epitaxy) of GaAs is caused by the adsorbed alkyls, which terminate surfaces and block all of the decomposition sites for TMGa.

Original languageEnglish
Pages (from-to)104-108
Number of pages5
JournalJournal of Crystal Growth
Volume136
Issue number1-4
DOIs
Publication statusPublished - 1994 Mar 1
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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