Abstract
Adsorption kinetics of dimethylsilane (DMS) at Si(0 0 1) surface has been investigated by using temperature-programmed desorption (TPD). The saturated hydrogen coverage of two monolayer was identical with that from monomethylsilane (MMS)-saturated surface. By being combined with the C/H ratios within a molecule (1/6 for MMS and 1/4 for DMS), this fact suggests enhanced C incorporation by DMS as compared with MMS by a factor of 1.5. The TPD spectra are deconvoluted into β 1 (∼510°C), β′ 1 (∼550°C), γ (∼615°C) and δ (∼910°C) peaks. The appearance of the bulk C-related γ peak from the very initial adsorption, in contrast to MMS, is consistent with the enhanced C incorporation. Although the hydrogen uptake (H-uptake) curve is quantitatively fitted with the four-site adsorption model, discussions on the sub-peak assignments suggest presence of further decompositions of ad-species at initial adsorptions.
| Original language | English |
|---|---|
| Pages (from-to) | 183-187 |
| Number of pages | 5 |
| Journal | Applied Surface Science |
| Volume | 224 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - 2004 Mar 15 |
| Externally published | Yes |
Keywords
- Adsorption kinetics
- Dimethylsilane
- Hydrogen desorption
- Monomethylsilane
- Si(0 0 1)
- SiC
- TPD
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films