Adsorption kinetics of dimethylsilane at Si(0 0 1)

Karuppanan Senthil, Hideki Nakazawa, Maki Suemitsu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Adsorption kinetics of dimethylsilane (DMS) at Si(0 0 1) surface has been investigated by using temperature-programmed desorption (TPD). The saturated hydrogen coverage of two monolayer was identical with that from monomethylsilane (MMS)-saturated surface. By being combined with the C/H ratios within a molecule (1/6 for MMS and 1/4 for DMS), this fact suggests enhanced C incorporation by DMS as compared with MMS by a factor of 1.5. The TPD spectra are deconvoluted into β 1 (∼510°C), β′ 1 (∼550°C), γ (∼615°C) and δ (∼910°C) peaks. The appearance of the bulk C-related γ peak from the very initial adsorption, in contrast to MMS, is consistent with the enhanced C incorporation. Although the hydrogen uptake (H-uptake) curve is quantitatively fitted with the four-site adsorption model, discussions on the sub-peak assignments suggest presence of further decompositions of ad-species at initial adsorptions.

Original languageEnglish
Pages (from-to)183-187
Number of pages5
JournalApplied Surface Science
Volume224
Issue number1-4
DOIs
Publication statusPublished - 2004 Mar 15

Keywords

  • Adsorption kinetics
  • Dimethylsilane
  • Hydrogen desorption
  • Monomethylsilane
  • Si(0 0 1)
  • SiC
  • TPD

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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