Adsorption geometry of Na saturation on the dimerized Si(100)(2 X 1) surface

T. Hashizume; K. Motai; H. Lu; T. Sakurai

doi:10.1016/0169-4332(93)90323-4

Adsorption geometry of Na saturation on the dimerized Si(100)(2 X 1) surface

T. Hashizume, K. Motai, H. Lu, T. Sakurai

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Na adsorption on the Si(100)(2 X 1) surface at the saturation coverage was investigated using field-ion scanning tunneling microscopy/spectroscopy (FI-STM/STS). The Na saturated surface has a (2 X 1) dimerized structure, similar to that of the clean (2 X 1) surface. In the STM image, each dimer is imaged to be bifurcated in the filled states. The STS measurement showed a large energy gap of approximately 1 eV, suggesting that the Na/Si(100)-(2 X 1) surface has the semiconductor-like electronic states of the surface. These observations are consistent with the double-layer model proposed by Kono's group and a recent theoretical study by Terakura's group.

Original language	English
Pages (from-to)	261-265
Number of pages	5
Journal	Applied Surface Science
Volume	67
Issue number	1-4
DOIs	https://doi.org/10.1016/0169-4332(93)90323-4
Publication status	Published - 1993 Apr 2

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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title = "Adsorption geometry of Na saturation on the dimerized Si(100)(2 X 1) surface",

abstract = "Na adsorption on the Si(100)(2 X 1) surface at the saturation coverage was investigated using field-ion scanning tunneling microscopy/spectroscopy (FI-STM/STS). The Na saturated surface has a (2 X 1) dimerized structure, similar to that of the clean (2 X 1) surface. In the STM image, each dimer is imaged to be bifurcated in the filled states. The STS measurement showed a large energy gap of approximately 1 eV, suggesting that the Na/Si(100)-(2 X 1) surface has the semiconductor-like electronic states of the surface. These observations are consistent with the double-layer model proposed by Kono's group and a recent theoretical study by Terakura's group.",

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T1 - Adsorption geometry of Na saturation on the dimerized Si(100)(2 X 1) surface

AU - Hashizume, T.

AU - Motai, K.

AU - Lu, H.

AU - Sakurai, T.

PY - 1993/4/2

Y1 - 1993/4/2

N2 - Na adsorption on the Si(100)(2 X 1) surface at the saturation coverage was investigated using field-ion scanning tunneling microscopy/spectroscopy (FI-STM/STS). The Na saturated surface has a (2 X 1) dimerized structure, similar to that of the clean (2 X 1) surface. In the STM image, each dimer is imaged to be bifurcated in the filled states. The STS measurement showed a large energy gap of approximately 1 eV, suggesting that the Na/Si(100)-(2 X 1) surface has the semiconductor-like electronic states of the surface. These observations are consistent with the double-layer model proposed by Kono's group and a recent theoretical study by Terakura's group.

AB - Na adsorption on the Si(100)(2 X 1) surface at the saturation coverage was investigated using field-ion scanning tunneling microscopy/spectroscopy (FI-STM/STS). The Na saturated surface has a (2 X 1) dimerized structure, similar to that of the clean (2 X 1) surface. In the STM image, each dimer is imaged to be bifurcated in the filled states. The STS measurement showed a large energy gap of approximately 1 eV, suggesting that the Na/Si(100)-(2 X 1) surface has the semiconductor-like electronic states of the surface. These observations are consistent with the double-layer model proposed by Kono's group and a recent theoretical study by Terakura's group.

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JF - Applied Surface Science

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Adsorption geometry of Na saturation on the dimerized Si(100)(2 X 1) surface

Abstract

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