TY - JOUR
T1 - Adsorption behavior of various fluorocarbon gases on silicon wafer surface
AU - Hidaka, Atsushi
AU - Yamashita, Satoru
AU - Ishii, Hidekazu
AU - Kato, Takeyoshi
AU - Tanahashi, Naoki
AU - Kitano, Masafumi
AU - Goto, Tetsuya
AU - Teramoto, Akinobu
AU - Shirai, Yasuyuki
AU - Ohmi, Tadahiro
PY - 2005/4
Y1 - 2005/4
N2 - An analytical technique to clarifying the adsorption behavior of a fluorocarbon gas, which is one of the key steps in reactive ion etching, has been established. In this paper, we focus on the adsorption behavior of fluorocarbon gases to the silicon wafer surface to clarify the etching mechanism in order to realize etching to a high aspect ratio. Each fluorocarbon gas had surface selectivity for SiO2, Si and the photoresist. Each fluorocarbon gas reacted differently at the silicon wafer surface. As a result, the etching mechanism could be clarified using this newly established analytical technique. Therefore, an etching mechanism will be able to be clarified by applying the newly established analytical technique to the fluorocarbon gases expected to be useful for etching of high aspect ratio and further high performance ultra large scale integrated circuit device must be realized.
AB - An analytical technique to clarifying the adsorption behavior of a fluorocarbon gas, which is one of the key steps in reactive ion etching, has been established. In this paper, we focus on the adsorption behavior of fluorocarbon gases to the silicon wafer surface to clarify the etching mechanism in order to realize etching to a high aspect ratio. Each fluorocarbon gas had surface selectivity for SiO2, Si and the photoresist. Each fluorocarbon gas reacted differently at the silicon wafer surface. As a result, the etching mechanism could be clarified using this newly established analytical technique. Therefore, an etching mechanism will be able to be clarified by applying the newly established analytical technique to the fluorocarbon gases expected to be useful for etching of high aspect ratio and further high performance ultra large scale integrated circuit device must be realized.
KW - Adsorption behavior
KW - Fluorocarbon gas
KW - High aspect ratio
KW - Reactive ion etching
KW - Surface selectivity
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U2 - 10.1143/JJAP.44.2245
DO - 10.1143/JJAP.44.2245
M3 - Article
AN - SCOPUS:21244447610
VL - 44
SP - 2245
EP - 2251
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 B
ER -