Adsorption and film growth of C60 on the GaAs(001) 2×6 surface by molecular-beam epitaxy

Qikun Xue, T. Ogino, Y. Hasegawa, H. Shinohara, T. Sakurai

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21 Citations (Scopus)


Field ion scanning tunneling microscopy was employed to investigate C60 film growth on a GaAs(001)-2×6 surface prepared by molecular-beam epitaxy. The corrugated potential of the 2×6 substrate forces the first monolayer structure to be strongly modified, resulting in formation of a "double-chain" commensurate structure. A stronger interaction between C60 and Ga versus C60 and As was observed. This interaction of C60 and the substrate, however, is limited for two to three monolayers at the interface and the competing intermolecular interaction governs the three-dimensional growth of multiple-layer C60 crystalline film of the (111) orientation with a high density of screw dislocations.

Original languageEnglish
Pages (from-to)1985-1989
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number4
Publication statusPublished - 1996

ASJC Scopus subject areas

  • Condensed Matter Physics


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