Adsorption and decomposition of methylsilanes on Si(100)

Masanori Shinohara, Takehiro Maehama, Michio Niwano

Research output: Contribution to journalConference articlepeer-review

23 Citations (Scopus)

Abstract

We have investigated in-situ the adsorption and thermal decomposition of methylsilanes, SiHx(CH3)4-x (x = 1-3), on Si(100)(2×1), using infrared absorption spectroscopy (IRAS) in the multiple internal reflection geometry. IRAS spectra revealed that at initial stages of adsorption, monohydride (-SiH) and CH3-substituted hydride species (-SiHx(CH3)3-x) are generated with monohydride species being dominant. We suggest that upon room temperature adsorption of methylsilanes, breaking of the Si-H bonds of methylsilane is favored over that of the Si-C bonds. It is found that the dissociative adsorption of SiH3(CH3) exhibits the second-order kinetics. Due to thermal annealing, surface species -SiHx(CH3)3-x are thermally decomposed to generate surface Si-H and Si-C bonds, and subsequently H2 desorption from the Si-H bonds occurs.

Original languageEnglish
Pages (from-to)161-167
Number of pages7
JournalApplied Surface Science
Volume162
DOIs
Publication statusPublished - 2000 Aug 1
Event5th International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-5) - Provence, France
Duration: 1999 Jul 61999 Jul 9

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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