TY - JOUR
T1 - Adsorption and decomposition of methylsilanes on Si(100)
AU - Shinohara, Masanori
AU - Maehama, Takehiro
AU - Niwano, Michio
N1 - Funding Information:
Part of this work was supported by a Grand-in-Aid for Basic Scientific Research (Grand No. 11304018) from the Ministry of Education, Science, Sports and Culture of Japan. The author is sincerely grateful to Dr. Nobuo Miyamoto for valuable discussion and also grateful to Dr. Daisei Shoji for many contributions to the experimental work.
PY - 2000/8/1
Y1 - 2000/8/1
N2 - We have investigated in-situ the adsorption and thermal decomposition of methylsilanes, SiHx(CH3)4-x (x = 1-3), on Si(100)(2×1), using infrared absorption spectroscopy (IRAS) in the multiple internal reflection geometry. IRAS spectra revealed that at initial stages of adsorption, monohydride (-SiH) and CH3-substituted hydride species (-SiHx(CH3)3-x) are generated with monohydride species being dominant. We suggest that upon room temperature adsorption of methylsilanes, breaking of the Si-H bonds of methylsilane is favored over that of the Si-C bonds. It is found that the dissociative adsorption of SiH3(CH3) exhibits the second-order kinetics. Due to thermal annealing, surface species -SiHx(CH3)3-x are thermally decomposed to generate surface Si-H and Si-C bonds, and subsequently H2 desorption from the Si-H bonds occurs.
AB - We have investigated in-situ the adsorption and thermal decomposition of methylsilanes, SiHx(CH3)4-x (x = 1-3), on Si(100)(2×1), using infrared absorption spectroscopy (IRAS) in the multiple internal reflection geometry. IRAS spectra revealed that at initial stages of adsorption, monohydride (-SiH) and CH3-substituted hydride species (-SiHx(CH3)3-x) are generated with monohydride species being dominant. We suggest that upon room temperature adsorption of methylsilanes, breaking of the Si-H bonds of methylsilane is favored over that of the Si-C bonds. It is found that the dissociative adsorption of SiH3(CH3) exhibits the second-order kinetics. Due to thermal annealing, surface species -SiHx(CH3)3-x are thermally decomposed to generate surface Si-H and Si-C bonds, and subsequently H2 desorption from the Si-H bonds occurs.
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U2 - 10.1016/S0169-4332(00)00186-0
DO - 10.1016/S0169-4332(00)00186-0
M3 - Conference article
AN - SCOPUS:0034247926
VL - 162
SP - 161
EP - 167
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
T2 - 5th International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-5)
Y2 - 6 July 1999 through 9 July 1999
ER -