Adsorption and abstraction of atomic hydrogen on the Si(1 1 0) surfaces

A. R. Khan, Y. Narita, A. Namiki, A. Kato, M. Suemitsu

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

The abstraction reaction of D adatoms by H atoms have been investigated on the Si(1 1 0) surfaces. The direct abstraction to form HD molecules obeys a second-order rate law in D coverage θD. On the other hand, the indirect abstraction to form D2 molecules obeys a fourth-order rate law in θD. In addition to the direct abstraction, indirect abstraction to form HD molecules is also included due to piled H adatoms during H exposure. It is found that the indirect abstraction is promoted on the surfaces saturated with dideuterides, suggesting that dideuterides (dihydrides) play a significant role in the indirect abstraction paths. The kinetics of the abstraction reactions on the Si(1 1 0) surfaces look similar to those on the Si(1 0 0) surface. However, the delayed D2 desorption exhibits time profiles different from those on the Si(1 0 0) surfaces.

Original languageEnglish
Pages (from-to)1979-1986
Number of pages8
JournalSurface Science
Volume602
Issue number11
DOIs
Publication statusPublished - 2008 Jun 1

Keywords

  • Atom-solid interactions
  • FTIR
  • H-sticking
  • Hot complex
  • Momentary coverages
  • Plasma processing
  • Thermal desorption
  • Time response

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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