Adhesion of a-C:F during oxygen plasma annealing

Y. Matsubara; K. Endo; T. Tatsumi; T. Horiuchi

Adhesion of a-C:F during oxygen plasma annealing

Y. Matsubara, K. Endo, T. Tatsumi, T. Horiuchi

Research output: Contribution to journal › Conference article › peer-review

Abstract

Fluorinated amorphous carbon (a-C:F) films sandwiched between layers of SiO₂ have been proposed as an interlayer dielectric (ILD) structure in order to enhance resistance to oxygen plasma. This study describes adhesion failure mechanisms for the sandwiched fluorinated amorphous carbon film (a-C:F) structure during oxygen plasma annealing. We have found 3 failure modes: 1) capping SiO₂ layer peels off, 2) thickness reduction of a-C:F by decomposition, and 3) etching phenomena at the interface between SiO₂ and a-C:F by CFx outgassing from a-C:F. The outgassed CFx radicals were stored at the interfaces and the etching of SiO₂ occurred during the subsequent 150 °C oxygen plasma resist removal process. Thermal decomposition of a-C:F ILD sandwiched between layers of SiO₂ was performed to determine the outgassed species, as well as the thickness reduction of a-C:F.

Original language	English
Pages (from-to)	19-24
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	476
Publication status	Published - 1997 Dec 1
Externally published	Yes
Event	Proceedings of the 1997 MRS Spring Meeting - San Francisco, CA, USA Duration: 1997 Mar 31 → 1997 Apr 2

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Adhesion of a-C:F during oxygen plasma annealing",

abstract = "Fluorinated amorphous carbon (a-C:F) films sandwiched between layers of SiO2 have been proposed as an interlayer dielectric (ILD) structure in order to enhance resistance to oxygen plasma. This study describes adhesion failure mechanisms for the sandwiched fluorinated amorphous carbon film (a-C:F) structure during oxygen plasma annealing. We have found 3 failure modes: 1) capping SiO2 layer peels off, 2) thickness reduction of a-C:F by decomposition, and 3) etching phenomena at the interface between SiO2 and a-C:F by CFx outgassing from a-C:F. The outgassed CFx radicals were stored at the interfaces and the etching of SiO2 occurred during the subsequent 150 °C oxygen plasma resist removal process. Thermal decomposition of a-C:F ILD sandwiched between layers of SiO2 was performed to determine the outgassed species, as well as the thickness reduction of a-C:F.",

author = "Y. Matsubara and K. Endo and T. Tatsumi and T. Horiuchi",

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pages = "19--24",

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T1 - Adhesion of a-C:F during oxygen plasma annealing

AU - Matsubara, Y.

AU - Endo, K.

AU - Tatsumi, T.

AU - Horiuchi, T.

PY - 1997/12/1

Y1 - 1997/12/1

N2 - Fluorinated amorphous carbon (a-C:F) films sandwiched between layers of SiO2 have been proposed as an interlayer dielectric (ILD) structure in order to enhance resistance to oxygen plasma. This study describes adhesion failure mechanisms for the sandwiched fluorinated amorphous carbon film (a-C:F) structure during oxygen plasma annealing. We have found 3 failure modes: 1) capping SiO2 layer peels off, 2) thickness reduction of a-C:F by decomposition, and 3) etching phenomena at the interface between SiO2 and a-C:F by CFx outgassing from a-C:F. The outgassed CFx radicals were stored at the interfaces and the etching of SiO2 occurred during the subsequent 150 °C oxygen plasma resist removal process. Thermal decomposition of a-C:F ILD sandwiched between layers of SiO2 was performed to determine the outgassed species, as well as the thickness reduction of a-C:F.

AB - Fluorinated amorphous carbon (a-C:F) films sandwiched between layers of SiO2 have been proposed as an interlayer dielectric (ILD) structure in order to enhance resistance to oxygen plasma. This study describes adhesion failure mechanisms for the sandwiched fluorinated amorphous carbon film (a-C:F) structure during oxygen plasma annealing. We have found 3 failure modes: 1) capping SiO2 layer peels off, 2) thickness reduction of a-C:F by decomposition, and 3) etching phenomena at the interface between SiO2 and a-C:F by CFx outgassing from a-C:F. The outgassed CFx radicals were stored at the interfaces and the etching of SiO2 occurred during the subsequent 150 °C oxygen plasma resist removal process. Thermal decomposition of a-C:F ILD sandwiched between layers of SiO2 was performed to determine the outgassed species, as well as the thickness reduction of a-C:F.

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T2 - Proceedings of the 1997 MRS Spring Meeting

Y2 - 31 March 1997 through 2 April 1997

ER -

Adhesion of a-C:F during oxygen plasma annealing

Abstract

ASJC Scopus subject areas

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