Adhesion and nucleation property of CVD-Cu with ALD-Co(W) film as Cu diffusion barrier and adhesion promoting layer in future ULSI interconnects

K. Shima, H. Shimizu, T. Momose, Y. Shimogaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

1) Using Cu(hfacXtmvs) and Ru, we can form ultra thin and continuous CVD-Cu film with good adhesion strength. 2) Co(W) shows good adhesion strength with CVD-Cu as Ru when Cu was deposited by O and F free precursor. 3) To utilize Co(W) as barrier layer, [Cu(sBu-Me-amd)]2 will be required. But, its nucleation property have to be enhanced. (ex. by some catalytic agent such as CVD-Mn).

Original languageEnglish
Title of host publicationAdvanced Metallization Conference 2012
Pages20-28
Number of pages9
Publication statusPublished - 2012 Dec 1
Externally publishedYes
EventAdvanced Metallization Conference 2012 - Albany, NY, United States
Duration: 2012 Oct 92012 Oct 11

Publication series

NameAdvanced Metallization Conference (AMC)
ISSN (Print)1540-1766

Other

OtherAdvanced Metallization Conference 2012
CountryUnited States
CityAlbany, NY
Period12/10/912/10/11

ASJC Scopus subject areas

  • Materials Science(all)
  • Industrial and Manufacturing Engineering

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